TITLE

Single phase InxGa1-xN (0.25≤x≤0.63) alloys synthesized by metal organic chemical vapor deposition

AUTHOR(S)
Pantha, B. N.; Li, J.; Lin, J. Y.; Jiang, H. X.
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p182107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present the results of single phase InxGa1-xN alloys for the In composition ranging from 25% to 63% synthesized by metal organic chemical vapor deposition. Single peak of x-ray diffraction θ-2θ scans of the (002) plane in InGaN alloys confirms that there is no phase separation. It was found both electron mobility and concentration increase with an increase of In content. Atomic force microscopy measurements revealed that the grown films have a surface roughness that varies between 1.5 and 4.0 nm and are free from In droplets. The results suggest that it is possible to synthesize single phase InGaN alloys inside the theoretically predicted miscibility gap.
ACCESSION #
35279179

 

Related Articles

  • Study of microwave plasma-assisted chemical vapor deposition of poly-and single-crystalline diamond films. Vikharev, A. L.; Gorbachev, A. M.; Muchnikov, A. B.; Radishchev, D. B. // Radiophysics & Quantum Electronics;Oct2007, Vol. 50 Issue 10/11, p913 

    We study conditions for microwave plasma-assisted chemical vapor deposition of high-quality single-crystal diamond films in a CVD reactor. These conditions are studied using the results of homoepitaxial growth of polycrystalline diamond films on diamond substrates and on the basis of numerical...

  • Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer. Çörekçi, S.; Öztürk, M. K.; Akaoğlu, B.; Çakmak, M.; Özçelik, S.; Özbay, E. // Journal of Applied Physics;6/15/2007, Vol. 101 Issue 12, p123502 

    AlxGa1-xN/GaN (x∼0.3) heterostructures with and without a high-temperature (HT) AlN interlayer (IL) have been grown on sapphire (Al2O3) substrates and AlN buffer/Al2O3 templates by metal organic chemical vapor deposition. The effects of an AlN buffer layer (BL) grown on an Al2O3 substrate...

  • Influence of surface bow on reconstruction on 2-inch SiC (0001) wafer. Zhu, Ming-Xing; Chen, Yi; Shi, Biao; Liu, Xue-Chao; Chang, Shao-Hui; Yan, Cheng-Feng; Yang, Jian-Hua; Shi, Er-Wei // Journal of Applied Physics;Jan2012, Vol. 111 Issue 2, p023516 

    The step morphologies of a gas-etched 2-in. 6H-SiC (0001) wafer are investigated by the atomic force microscope. Due to the concave surface induced by bow, undulation surface morphologies were observed in the edge region. In the upside and downside region of the center along the <11[formula]0>...

  • Nucleation of ReBa2Cu3Ox (Re = rare-earth) during high-rate metal-organic chemical vapor deposition growth. Solovyov, Vyacheslav F.; Li, Qiang; Chen, Y.; Guevara, A.; Shi, T.; Selvamanickam, V. // Journal of Applied Physics;Dec2011, Vol. 110 Issue 12, p123904 

    Large-scale, high-rate epitaxial growth technology for the second-generation superconducting wire brings unique technological challenges for the thin-film coating industry. One of the most difficult steps of the process is controlling nucleation of a complex compound over a km-long low-cost...

  • Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells. Chen, Z.; Fichtenbaum, N.; Brown, D.; Keller, S.; Mishra, U. K.; Denbaars, S. P.; Nakamura, S. // Journal of Electronic Materials;May2008, Vol. 37 Issue 5, p546 

    In this report, the influence of magnesium doping on the characteristics of InGaN/GaN multiple quantum wells (MQWs) was investigated by means of atomic force microscopy (AFM), photoluminescence (PL), and X-ray diffraction (XRD). Five-period InGaN/GaN MQWs with different magnesium doping levels...

  • Impact of GaN buffer layer on the growth and properties of InN islands. Laboutin, O. A.; Welser, R. E. // Applied Physics Letters;6/2/2008, Vol. 92 Issue 22, p223103 

    Uncapped InN islands are grown on GaN buffer layers by low pressure metal-organic chemical vapor deposition. The buffer layer threading dislocation density is intentionally altered via the GaN growth pressure, as indicated by both the x-ray diffraction and atomic force microscopy. InN island...

  • Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD. Çörekçi, S.; Öztürk, M.; Bengi, A.; Çakmak, M.; Özçelik, S.; Özbay, E. // Journal of Materials Science;Mar2011, Vol. 46 Issue 6, p1606 

    n AlN buffer layer and a thick-GaN layer for high-electron-mobility transistors (HEMTs) were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The structural and morphological properties of the layers were investigated by high resolution X-ray diffraction (HRXRD)...

  • Epitaxial Growth of Copper Film by MOCVD. Rong Tu; Jin Huang; Song Zhang; Lianmeng Zhang // Key Engineering Materials;2016, Vol. 680, p507 

    Copper thin films were deposited on single crystal sapphire substrate via metal-organic MOCVD using Cu(acac)2 as precursor. X-ray diffraction (XRD) and Scanning Electronic Microscope (SEM) were employed for studying preferred orientation and microstructure. Atomic Force Microscope was utilized...

  • Structural and optical properties of InGaN/GaN multiple quantum wells grown on nano-air-bridged GaN template. Zang, K. Y.; Wang, Y. D.; Liu, H. F.; Chua, S. J. // Applied Physics Letters;10/23/2006, Vol. 89 Issue 17, p171921 

    Structural and optical properties of InGaN/GaN multiple quantum wells (MQWs) grown on nano-air-bridged GaN template by metal organic chemical vapor deposition were investigated. The InGaN/GaN MQWs on nano-air-bridged GaN demonstrate much better surface morphology, revealing low defect density...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics