TITLE

Self-extrusion of Te nanowire from Si–Sb–Te thin films

AUTHOR(S)
Cheng, Y.; Han, X. D.; Liu, X. Q.; Zheng, K.; Zhang, Z.; Zhang, T.; Song, Z. T.; Liu, B.; Feng, S. L.
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p183113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A crystallized Si2Sb2Te5 thin film was observed to extrude single-crystalline [0001] oriented tellurium nanowires at room temperature. The single crystalline Te nanowires nucleation and extruded outgrowth can be greatly accelerated by electron-beam-illumination (EBI) in a transmission electron microscope by an order as high as four. The EBI-enhanced outgrowth speed of Te nanowires is a function of electron beam flux and can be described as v=k ln(J+m). This Te nanowires self-outflow phenomenon comes from a decomposition process of the Si2Sb2Te5 matrix and provides an interesting model and mechanism of the nanowires’ growth, which is distinctive to the vapor-liquid-solid (VLS) mechanism.
ACCESSION #
35279169

 

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