TITLE

Metal-oxide-high-k-oxide-silicon memory structure using an Yb2O3 charge trapping layer

AUTHOR(S)
Pan, Tung-Ming; Chen, Jing-Wei
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p183510
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter, we proposed a metal-oxide-high-k-oxide-silicon (MOHOS)-type memory structure using a high-k Yb2O3 charge trapping layer for flash memory applications. When using Fowler-Nordheim for charging and discharging, the high-k Yb2O3 MOHOS-type memories that had been annealed at 800 °C exhibited large threshold voltage shifting (memory window of ∼2.2 V) and excellent data retention (charge loss of ∼6% measured time up to 104 s and at room temperature) because of the higher probability for trapping the charge carrier due to the formation of the Yb-silicate layer and the smooth surface roughness.
ACCESSION #
35279163

 

Related Articles

  • Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide. Guan, Weihua; Long, Shibing; Jia, Rui; Liu, Ming // Applied Physics Letters;8/6/2007, Vol. 91 Issue 6, p062111 

    Resistive switching characteristics of ZrO2 films containing gold nanocrystals (nc-Au) are investigated for nonvolatile memory applications. The sandwiched top electrode/ZrO2 (with nc-Au embedded)/n+ Si structure exhibits two stable resistance states (high-resistance state and low-resistance...

  • Recent progress in gold nanoparticle-based non-volatile memory devices. Jang-Sik Lee // Gold Bulletin;2010, Vol. 43 Issue 3, p189 

    Recently, much progress has been made toward the fabrication of non-volatile memory devices based on metallic nanoparticles. Among the many kinds of nanoparticles, gold nanoparticles are some of the most widely used materials for charge trapping elements in non-volatile memory devices because...

  • Multiferroic oxides-based flash memory and spin-field-effect transistor. Chenglong Jia; Berakdar, Jamal // Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p012105 

    We propose a modified spin-field-effect transistor fabricated in a two dimensional electron gas (2DEG) formed at the surface of multiferroic oxides with a transverse helical magnetic order. The topology of the oxide local magnetic moments induces a resonant momentum-dependent effective...

  • Hole trapping due to anode hole injection in thin tunnel gate oxides in memory devices... Samantha, Piyas // Applied Physics Letters;11/8/1999, Vol. 75 Issue 19, p2966 

    Studies hole trapping characteristics in thin thermally grown silicon dioxide in flash memory device with n-type floating polycrystalline silicon gate under the Fowler-Nordheim constant current and voltage stress. Evidence that constant voltage stress degrades the gate oxide quality faster than...

  • Modeling the memory retention characteristics of silicon-nitride-oxide-silicon nonvolatile transistors in a varying thermal environment. McWhorter, P. J.; Miller, S. L.; Dellin, T. A. // Journal of Applied Physics;8/15/1990, Vol. 68 Issue 4, p1902 

    Presents a study that assessed the memory retention characteristics of silicon-nitride-oxide-silicon (SNOS) nonvolatile memory devices. Comparison between a metal-oxide-semiconductor transistor and an SNOS transistor; Examination of a qualitative description of the SNOS operation; Details of...

  • Impact of floating dot distribution on memory characteristics of self-aligned dots-on-nanowire memory. Nakajima, Anri; Fujiaki, Tomo; Ezaki, Tatsuya // Journal of Applied Physics;Jun2009, Vol. 105 Issue 11, p114505-1 

    A nanowire memory device with self-aligned Si nanoscale floating dots has been fabricated to overcome the tradeoff between retention time and programming speed. The dependence of memory characteristics on the dot number and distribution have been systematically analyzed experimentally and...

  • Recent Patents in Semiconductor Nanocluster Floating Gate Flash Memory. Dai, Jiyan Y.; Pui-Fai Lee // Recent Patents on Nanotechnology;Jun2007, Vol. 1 Issue 2, p97 

    Nanoclusters (NC) as charge storage nodes have been applied in nonvolatile, high-speed, high-density and low-power memory devices. Compared with conventional floating gate memory, where a layer of poly-Si is used for charge storage, a memory device composed of nanoclusters isolated by...

  • Influence of memory propagation on phase-resolved stochastic behavior of ac-generated partial... Van Brunt, R.J.; Cernyar, E.W. // Applied Physics Letters;6/10/1991, Vol. 58 Issue 23, p2628 

    Studies the influence of memory propagation on phase-resolved stochastic behavior of ac-generated partial discharges. Importance of considering memory effect in interpreting results of phase-resolved partial-discharge measurements.

  • Boron penetration in p[sup +] polycrystalline-Si/Al[sub 2]O[sub 3]/Si metal-oxide-semiconductor system. Park, Dae-Gyu; Dae-Gyu Park; Cho, Heung-Jae; Heung-Jae Cho; Yeo, In-Seok; In-Seok Yeo; Roh, Jae-Sung; Jae-Sung Roh; Hwang, Jeong-Mo; Jeong-Mo Hwang // Applied Physics Letters;10/2/2000, Vol. 77 Issue 14 

    We report a flat band voltage instability of a p[sup +] polycrystalline-Si (poly-Si)/Al[sub 2]O[sub 3]/n-Si metal-oxide-semiconductor (MOS) system due to boron penetration. The flat band voltage shift of the p[sup +] poly-Si/Al[sub 2]O[sub 3]/n-Si MOS capacitor determined by capacitance-voltage...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics