TITLE

Flexible pentacene ion sensitive field effect transistor with a hydrogenated silicon nitride surface treated Parylene top gate insulator

AUTHOR(S)
Diallo, K.; Lemiti, M.; Tardy, J.; Bessueille, F.; Jaffrezic-Renault, N.
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p183305
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the realization of flexible ion sensitive organic field effect transistors based on pentacene on which Parylene-C was deposited as top gate dielectric. In order to create proton sensitive sites at the insulator/electrolyte interface, Parylene-C surface has been covered with a thin layer of hydrogenated silicon nitride (SiN:H) deposited by photochemical vapor deposition at moderate temperature. The combination of Parylene and SiN:H enables the realization of highly reproducible and good performance transistors as well as ion sensitive sensors with an excellent pH response both in the acidic and alkaline pH range in a nearly all plastic technology.
ACCESSION #
35279148

 

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