Optical reflection from excitonic quantum-dot multilayer structures

Fu, Y.; Ågren, H.; Höglund, L.; Andersson, J. Y.; Asplund, C.; Qiu, M.; Thylén, L.
November 2008
Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p183117
Academic Journal
We study theoretically and experimentally the optical reflection from excitonic quantum-dot (QD) multilayer structures composed of InAs QDs in a GaAs substrate. Quantum mechanical and finite-difference time-domain numerical calculations indicate that the incident radiation in the optical reflectance measurement photoexcites the InAs QDs which then form excitonic dipoles. The excitonic dipole modifies significantly the dielectric constant of the QD, which results in a reflectance peak in the vicinity of the excitonic energy, as observed experimentally.


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