A physical model for the rapid degradation of semiconductor laser diodes

Martín-Martín, A.; Avella, M.; Iñiguez, M. P.; Jiménez, J.; Oudart, M.; Nagle, J.
October 2008
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p171106
Academic Journal
The degradation of AlGaAs based high power laser bars (808 nm) is modeled in terms of the thermal stress gradient induced by the overheating produced at a facet defect by self-absorption and nonradiative recombination. Using a thermomechanical model, the local heating at the defect is shown to induce local stress above the yield strength necessary for plastic deformation. Cathodoluminescence images of the facets show the formation of large facet defects. The role of the packaging stress is also elucidated. The power density dissipation and the local temperature necessary to achieve the plastic deformation are in good agreement with the experimental values reported for laser degradation.


Related Articles

  • Suppression of intersubband nonradiative transitions by a magnetic field in quantum well laser devices. Blank, Alexander; Feng, Shechao // Journal of Applied Physics;10/1/1993, Vol. 74 Issue 7, p4795 

    Analyzes suppression of intersubband nonradiative transitions by a magnetic field in quantum well laser devices. Types of semiconductor lasers operating in the far-infrared range of the electromagnetic spectrum; Band diagram for the proposed multiple quantum well intersubband laser.

  • Optical study of LaGaTaO single crystal co-doped with Ho and Yb. Lisiecki, Radosław; Ryba-Romanowski, Witold; Macalik, Lucyna; Komar, Jarosław; Berkowski, Marek // Applied Physics B: Lasers & Optics;Jul2014, Vol. 116 Issue 1, p183 

    Single crystal of LaGaTaO (LGT) containing intentionally 0.5 % of Ho and 1 % of Yb was grown by the Czochralski method. Examination of chemical composition of the grown crystal revealed that luminescent holmium and ytterbium ions are preferably retained in the melt and their actual...

  • Vacancy-controlled model of degradation in InGaAs/AlGaAs/GaAs heterostructure lasers. Hopgood, A. A. // Journal of Applied Physics;10/1/1994, Vol. 76 Issue 7, p4068 

    Proposes a model for dark line defect (DLD) growth in semiconductor lasers by dislocation climb. Investigation into the effects of strained layer on the number of vacancies toward existing dislocations and their stability; Modes of laser degradation in the quantum well region; Discussion on DLD...

  • Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency. Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Amano, H.; Pearton, S. J.; Lee, I.-H.; Sun, Q.; Han, J.; Karpov, S. Yu. // Applied Physics Letters;2/14/2011, Vol. 98 Issue 7, p072104 

    The correlation of integrated microcathodoluminescence efficiency with crystalline quality and deep trap density of nonpolar GaN films grown by metal organic chemical vapor deposition on semi-insulating 6H-m-SiC or r-sapphire is analyzed. The results suggest a strong influence of nonradiative...

  • Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence. Akagi, T.; Kosaka, K.; Harui, S.; Muto, D.; Naoi, H.; Araki, T.; Nanishi, Y. // Journal of Electronic Materials;May2008, Vol. 37 Issue 5, p603 

    The correlation between threading dislocations (TDs) and nonradiative recombination centers in InN films was investigated by infrared cathodoluminescence (CL). Samples were grown on nitridated (0001) sapphire substrates with a low-temperature-grown InN buffer layer by radio frequency...

  • Thermoelasticity that uses fractional heat conduction equation. Povstenko, Y. // Journal of Mathematical Sciences;Oct2009, Vol. 162 Issue 2, p296 

    A survey of nonlocal generalizations of the Fourier law and heat conduction equation is presented. More attention is focused on the heat conduction with time and space fractional derivatives and on the theory of thermal stresses based on this equation.

  • Analysis of indicated efficiency of piston compressors. Evenko, V. // Chemical & Petroleum Engineering;Jul2006, Vol. 42 Issue 7/8, p451 

    It is shown that the indicated efficiency gives an exaggerated assessment of thermodynamic perfection of the working process of piston compressors and leads to a biased estimate of mechanical losses. It is established that an alternative to the indicated efficiency is internal efficiency of the...

  • Residual Thermal Stresses Simulation of Television Panel in the Forming Process. Part 1: Modelling. Zhou, H. M.; Xi, G. D.; Li, D Q. // Proceedings of the Institution of Mechanical Engineers -- Part C;May2006, Vol. 220 Issue 5, p573 

    Internal residual stresses in glass-pressed components such as television panel are mainly frozen in thermal stresses because of inhomogeneous cooling when surface layers stiffen sooner than the core region as in free quenching. Additional factors in pressing are the effects of melt pressure...

  • Electric Current Induced Thermomechanical Fatigue Testing of Interconnects. Keller, R. R.; Geiss, R. H.; Cheng, Y. -W.; Read, D. T. // AIP Conference Proceedings;2005, Vol. 788 Issue 1, p491 

    We demonstrate the use of electrical methods for evaluating the thermomechanical fatigue properties of patterned aluminum and copper interconnects on silicon-based substrates. Through a careful selection of alternating current frequency and current density, we used controlled Joule heating to...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics