TITLE

A physical model for the rapid degradation of semiconductor laser diodes

AUTHOR(S)
Martín-Martín, A.; Avella, M.; Iñiguez, M. P.; Jiménez, J.; Oudart, M.; Nagle, J.
PUB. DATE
October 2008
SOURCE
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p171106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The degradation of AlGaAs based high power laser bars (808 nm) is modeled in terms of the thermal stress gradient induced by the overheating produced at a facet defect by self-absorption and nonradiative recombination. Using a thermomechanical model, the local heating at the defect is shown to induce local stress above the yield strength necessary for plastic deformation. Cathodoluminescence images of the facets show the formation of large facet defects. The role of the packaging stress is also elucidated. The power density dissipation and the local temperature necessary to achieve the plastic deformation are in good agreement with the experimental values reported for laser degradation.
ACCESSION #
35279124

 

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