TITLE

Enhanced electrical properties of atomic layer deposited La2O3 thin films with embedded ZrO2 nanocrystals

AUTHOR(S)
Jinesh, K. B.; Klootwijk, J. H.; Lamy, Y.; Wolters, R.; Tois, E.; Tuominen, M.; Roozeboom, F.; Besling, W. F. A.
PUB. DATE
October 2008
SOURCE
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172904
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The deposition of alternating (sub)monolayers of lanthanum oxide (La2O3) and zirconium oxide (ZrO2) by atomic layer deposition has been carried out to create uniform LayZr1-yOx mixed oxide films. However, spontaneous nucleation of ZrO2 nanocrystals occurs during deposition within an amorphous La2O3 matrix. Such ZrO2 embedded La2O3 films exhibit low leakage currents in combination with higher electric breakdown fields and higher dielectric permittivities than the pure lanthanum and zirconium oxide films. The possible scenarios that account for this enhanced electric performance of these nanocluster-embedded dielectric thin films are explained.
ACCESSION #
35279113

 

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