Ni diffusion and its influence on electrical properties of AlxGa1-xN/GaN heterostructures

S. Huang; B. Shen; F. Lin; N. Ma; F. J. Xu; Z. L. Miao; J. Song; L. Lu; F. Liu; Y. Wang; Z. X. Qin; Z. J. Yang; G. Y. Zhang
October 2008
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172102
Academic Journal
The effect of thermal annealing of Ni/AlxGa1-xN/GaN structures on electric properties of AlxGa1-xN/GaN heterostructures has been studied by means of temperature-dependent Hall measurements and deep level transient spectroscopy. It is found that the mobility of the two-dimensional electron gas (2DEG) decreases from 1530 to 986 cm2/V s at room temperature (RT) after annealing the Al0.25Ga0.75N/GaN heterostructure with a 10 nm thick Ni cap layer at 600 °C. The density of the 2DEG is also reduced by 2.0×1012 cm-2 at RT after the annealing, and decreases with increasing temperature between 100 and 460 K. It is determined that an acceptorlike deep level with an activation energy of 1.23 eV and apparent capture cross section of 2.8×10-13 cm2 is introduced into the heterostructures. We believe that the acceptorlike deep level is induced by Ni diffusion during the annealing, and it results in the significant degradation of the transport properties of the 2DEG in the heterostructures.


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