Rectification effect and electron transport property of CdS/Si nanoheterostructure based on silicon nanoporous pillar array

Hai Jun Xu; Xin Jian Li
October 2008
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172105
Academic Journal
A CdS/Si nanoheterostructure was prepared by growing CdS nanocrystallites onto silicon nanoporous pillar array. A rectification effect with an onset voltage of ∼1 V, a forward current density of ∼170 mA cm-2 at 4.5 V, a leakage current density of ∼8×10-2 mA cm-2, and a reverse breakdown voltage of ∼8 V was observed. The rectifying ratio was evaluated to be ∼215 at ±4.5 V. The electron transport across the nanoheterostructure was found to be mainly controlled by sulfur vacancies and obey the trap-limited model. These results indicate that CdS/Si nanoporous pillar array might be a promising material in fabricating photoelectronic nanodevices.


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