TITLE

Thermal stability of amorphous silicon/silicon nitride stacks for passivating crystalline silicon solar cells

AUTHOR(S)
Gatz, S.; Plagwitz, H.; Altermatt, P. P.; Terheiden, B.; Brendel, R.
PUB. DATE
October 2008
SOURCE
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p173502
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The thermal stability of amorphous silicon/silicon nitride double layer surface passivation of p-type and n+-type crystalline surfaces is investigated for different deposition temperatures of the silicon nitride capping layer. An increase from 300 to 400 °C results in a significant improvement of the thermal stability of the surface passivation. The minimum surface recombination velocity achieved on p-type (1.5 Ω cm) silicon wafers is 0.75±0.6 cm/s and remains at 10±0.5 cm/s after 30 min annealing at 500 °C.
ACCESSION #
35279095

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics