Resistance switching properties of sol-gel derived La0.67Ca0.33MnO3 thin films on F-doped SnO2 conducting glass

Ting Zhang; Zhaohui Su; Hongju Chen; Linghong Ding; Weifeng Zhang
October 2008
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172104
Academic Journal
The electric-pulse-induced resistance switching of the Au–La0.67Ca0.33MnO3(LCMO)-FTO (fluorine-doped tin oxide) heterostructures was studied by electrochemical workstation. A distinct current-voltage characteristic of the device with pronounced reproducible nonlinearity, asymmetry, and hysteresis was observed at room temperature. The current-voltage characteristics suggest a Poole–Frenkel and space-charge-limited current type mechanism controlled by Au/LCMO interface traps. The resistance switching behavior shows obvious multilevel resistance switching. The present results suggest a possible application of Ag-LCMO-FTO system as multilevel memory devices.


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