TITLE

Intermixing and chemical structure at the interface between n-GaN and V-based contacts

AUTHOR(S)
Pookpanratana, S.; France, R.; Bär, M.; Weinhardt, L.; Fuchs, O.; Blum, M.; Yang, W.; Denlinger, J. D.; Moustakas, T. D.; Heske, C.
PUB. DATE
October 2008
SOURCE
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The interface between n-type GaN and V-based contacts was characterized by soft x-ray spectroscopy. We have investigated the chemical interface structure before and after a rapid thermal annealing (RTA) step, which is crucial for the formation of an Ohmic contact. X-ray photoelectron and x-ray excited Auger electron spectra suggest that RTA induces an accumulation of metallic Ga at the surface. Using x-ray emission spectroscopy, we find that the probed nitrogen atoms are in a VN-like environment, indicating that vanadium interacts with nitrogen atoms from the GaN to form VN.
ACCESSION #
35279086

 

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