Photoluminescence lifetime and potential fluctuation in wurtzite Zn1-xCdxO alloy films

Yamamoto, Kenji; Ohashi, Toshiya; Tawara, Takehiko; Gotoh, Hideki; Nakamura, Atsushi; Temmyo, Jiro
October 2008
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p171913
Academic Journal
Carrier recombination dynamics in wurtzite Zn1-xCdxO alloy films has been studied by time-resolved photoluminescence (PL) to evaluate the potential fluctuation. Typical PL lifetime τ2 in Zn1-xCdxO is around 200 ps and gradually increases with a Cd content of up to 0.19. At a Cd content over 0.3, τ2 becomes roughly 50 ns. The degree of potential fluctuation E0 is increased from 9 to 157 meV with an increment in Cd content of 0.19. In contrast, at a Cd content over 0.3, E0 decreases to 35 meV with a Cd content of 0.55. This suggests that the potential fluctuation in Zn1-xCdxO with a high Cd content is greatly improved, which is qualitatively supported by the Zimmermann’s model [R. Zimmermann, J. Cryst. Growth 101, 346 (1990)].


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