Energy gap reduction in dilute nitride GaAsSbN

Yan-Ting Lin; Ta-Chun Ma; Tsung-Yi Chen; Hao-Hsiung Lin
October 2008
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p171914
Academic Journal
The energy gap of dilute nitride GaAsSbN has been studied. We found that the energy gap reduction induced by nitrogen incorporation is nearly independent of the Sb composition of the alloy, indicating that the conduction band and the valence band can be independently manipulated by incorporating N and Sb, respectively. A “double” band anticrossing (BAC) model, which is a combination of a BAC model for GaAsN and a valence BAC model for GaAsSb with the localized levels and hybridization parameters reported in literatures, has been proposed to fit the energy gap of annealed GaAsSbN samples. The as-grown samples, however, are with lower energy gaps, most likely resulting from the existence of substitutional N pairing and clustering in the alloys.


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