Narrow inhomogeneous broadening of V-groove quantum wires grown on vicinal substrates

Moret, N.; Oberli, D. Y.; Dwir, B.; Rudra, A.; Gallo, P.; Kapon, E.
October 2008
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172107
Academic Journal
Significant reduction in inhomogeneous broadening of GaAs/AlGaAs V-groove quantum wires (QWRs) is achieved by growing them on vicinal (001) GaAs substrates misaligned by several degrees with respect to the [formula] groove direction. Low temperature photoluminescence spectra exhibit QWR linewidths as low as 3.7 meV for subband separation of 41 meV and 3 meV for subband separation of 27 meV. Atomic force microscopy evidences a change in the growth dynamics as compared with QWRs made on exact (001) GaAs substrates. The impact of the different growth dynamics on the wire interface structure is discussed.


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