Tunable graphene system with two decoupled monolayers

Schmidt, H.; Lüdtke, T.; Barthold, P.; McCann, E.; Fal'ko, V. I.; Haug, R. J.
October 2008
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172108
Academic Journal
The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FETs) gives access to special types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov–de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nanometer scale separation between them.


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