Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer

Huaxiang Yin; Sunil Kim; Chang Jung Kim; Ihun Song; Jaechul Park; Sangwook Kim; Youngsoo Park
October 2008
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172109
Academic Journal
A fully transparent nonvolatile memory with the conventional sandwich gate insulator structure was demonstrated. Wide band gap amorphous GaInZnO (a-GIZO) thin films were employed as both the charge trap layer and the transistor channel layer. An excellent program window of 3.5 V with a stressing time of 100 ms was achieved through the well-known Fowler–Nordheim tunneling method. Due to the similar energy levels extracted from the experimental data, the asymmetrical program/erase characteristics are believed to be the result of the strong trapping of the injected negative charges in the shallow donor levels of the GIZO film.


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