Spontaneous luminescence polarizations of wurtzite InGaN/GaN quantum wells

Chuanyu Jia; Tongjun Yu; Renchun Tao; Xiaodong Hu; Zhijian Yang; Zhixin Qin; Zhizhong Chen; Guoyi Zhang
October 2008
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p171114
Academic Journal
In this paper, we analyze the polarization selection rules of wurtzite InGaN/GaN quantum wells using the k·p perturbation method. It was found that the symmetry properties of the valence subbands’ wavefunctions at kt≠0 are quite different with those at kt=0. These symmetry properties of valence subbands’ wavefunctions influence the momentum matrix element for TE and TM modes, leading to a different polarization selection rules from the ones at kt=0 and the absence of spectra peak shift between TE and TM modes. It is suggested that the polarization selection rule at kt≠0 should be considered in the main transition process for wurtzite III-V semiconductors.


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