Reproducible growth of p-type ZnO:N using a modified atomic layer deposition process combined with dark annealing

Dunlop, L.; Kursumovic, A.; MacManus-Driscoll, J. L.
October 2008
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172111
Academic Journal
Nitrogen doped ZnO (ZnO:N) films were deposited by atmospheric atomic layer deposition (ALD) between 100 and 300 °C. Postannealing was required to remove compensating defects. After a low temperature dark annealing, originally n-type films became p-type. Films deposited at low temperatures (<=150 °C) have low hole mobilities (μ) of 0.2–0.4 cm2 V-1 s-1 and moderate hole concentrations (np) of around 1×1015 cm-3. Higher temperature deposited films (>=200 °C) have higher μ values (6 cm2 V-1 s-1) but np values <1×1013 cm-3. This crossover in transport properties can be explained by the opposing effects of deposition temperature on nitrogen doping level and distribution, and film crystallinity.


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