Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

Namkoong, Gon; Trybus, Elaissa; Lee, Kyung Keun; Moseley, Michael; Doolittle, W. Alan; Look, David C.
October 2008
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172112
Academic Journal
The free hole carriers in GaN have been limited to concentrations in the low 1018 cm-3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ∼10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ∼1.5×1019 cm-3.


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