Effects of Bi2Ti2O7 buffer layer on memory properties of BiFe0.95Mn0.05O3 thin film

C. H. Yang; G. D. Hu; Z. Wen; H. L. Yang
October 2008
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172906
Academic Journal
BiFe0.95Mn0.05O3 (BFMO) thin films with and without Bi2Ti2O7 (BTO) buffer layer were fabricated on p-type Si (111) substrates by metal organic decomposition. The maximum memory window of BFMO/Si is only 0.3 V due to the severe charge injection. In contrast, the larger memory windows are 0.8 and 2.4 V, respectively, for BFMO deposited on as-deposited BTO/Si and annealed BTO/Si. More importantly, the memory window of BFMO/annealed BTO/Si is not affected by changing voltage ramp rate and frequency at ±6 V. The BFMO also shows much reduced leakage current by using an annealed BTO buffer layer.


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