In situ study of surface reactions of atomic layer deposited LaxAl2-xO3 films on atomically clean In0.2Ga0.8As

Aguirre-Tostado, F. S.; Milojevic, M.; Lee, B.; Kim, J.; Wallace, R. M.
October 2008
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172907
Academic Journal
The surface reactions of LaxAl2-xO3 ultrathin films deposited on atomically clean In0.2Ga0.8As by atomic layer deposition are studied by in situ high resolution x-ray photoelectron spectroscopy. Using 1:2 alternating cycles of La2O3 and Al2O3 results in a La:Al concentration ratio of 1:10. We found that the LaxAl2-xO3/InGaAs interface consisted of interfacial Ga-suboxides and As–As bonds but no As- or In-oxides were detected. This suggests an interface formed by Ga–O–Al and Ga–O–La bonds from the precursor reaction.


Related Articles

  • Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems. McDonnell, S.; Dong, H.; Hawkins, J. M.; Brennan, B.; Milojevic, M.; Aguirre-Tostado, F. S.; Zhernokletov, D. M.; Hinkle, C. L.; Kim, J.; Wallace, R. M. // Applied Physics Letters;4/2/2012, Vol. 100 Issue 14, p141606 

    The Al2O3/GaAs and HfO2/GaAs interfaces after atomic layer deposition are studied using in situ monochromatic x-ray photoelectron spectroscopy. Samples are deliberately exposed to atmospheric conditions and interfacial oxide re-growth is observed. The extent of this re-growth is found to depend...

  • Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si. Pezzi, R. P.; Copel, M.; Gordon, M.; Cartier, E.; Baumvol, I. J. R. // Applied Physics Letters;6/12/2006, Vol. 88 Issue 24, p243509 

    Oxygen transport and incorporation were investigated following postdeposition annealing of metal-oxide-semiconductor structures having ultrathin rhenium films as metal electrode and HfO2 films as dielectric on Si(001). Isotopic tracing, nuclear reaction analysis, narrow resonant nuclear reaction...

  • Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability. Quevedo-Lopez, M. A.; Krishnan, S. A.; Kirsch, P. D.; Pant, G.; Gnade, B. E.; Wallace, R. M. // Applied Physics Letters;12/26/2005, Vol. 87 Issue 26, p262902 

    A hafnium silicon oxynitride gate dielectric with a universal channel mobility of ∼90% at 1 MV/cm, equivalent oxide thickness of approximately 1 nm, and leakage current 200× less than SiO2 is reported. X-ray photoelectron spectroscopy results suggest that the small peak mobility loss...

  • Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors. Galatage, R. V.; Dong, H.; Zhernokletov, D. M.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M. // Applied Physics Letters;10/24/2011, Vol. 99 Issue 17, p172901 

    The interface trap density (Dit) and bonding of the HfO2/InP interface is investigated. The energy distribution of interface states extracted using capacitance-voltage measurements show a peak near midgap in InP and a tail, which extends into the InP conduction band. Both the Dit peak and the...

  • X-ray photoelectron spectroscopy study of ZrO2/TiO2/Si stack. Zhu, L. Q.; Zhang, L. D.; Fang, Q. // Applied Physics Letters;10/22/2007, Vol. 91 Issue 17, p172902 

    A ZrO2/TiO2/Si gate stack has been prepared by using solid phase reaction between sputtered ZrO2/Ti stack and underlying SiO2/Si substrate through in situ vacuum annealing. X-ray photoelectron spectroscopy was used to analyze interfacial properties of the ZrO2/TiO2/Si stack after annealing at...

  • Intriguing conducting properties of HfOxNy thin films prepared from the Hf[N(C2H5)2]4. Chou, Yi-Hsuan; Chiu, Hsin-Tien; Kuo, Teng-Fang; Chi, Cheng-Chung; Chuang, Shiow-Huey // Applied Physics Letters;12/18/2006, Vol. 89 Issue 25, p252901 

    Hafnium nitride films were prepared on the Si(100) substrates by the metal-organic chemical vapor deposition method using Hf[N(C2H5)2]4. The prepared samples were then oxidized in air, followed by rapid-thermal annealing to produce HfOxNy thin films, meanwhile the associated physical properties...

  • Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy. Yoshikawa, M.; Ogawa, S.; Inoue, K.; Seki, H.; Tanahashi, Y.; Sako, H.; Nanen, Y.; Kato, M.; Kimoto, T. // Applied Physics Letters;2/20/2012, Vol. 100 Issue 8, p082105 

    We measured cathodoluminescence (CL) spectra of SiO2 films grown on 4H-SiC wafers and found that for an acceleration voltage of 5 kV, CL peaks at 460 and 490 nm, assigned to oxygen vacancy centers (OVCs), become weak by post-oxidation annealing in N2O ambient at 1300 °C whereas the CL peak...

  • Role of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing metal-oxide-semiconductor capacitor. Kundu, Souvik; Halder, Nripendra N.; Biswas, D.; Banerji, P.; Shripathi, T.; Chakraborty, S. // Journal of Applied Physics;Aug2012, Vol. 112 Issue 3, p034514 

    In this article, we report GaAs metal-oxide-semiconductor (MOS) capacitors with a metal organic chemical vapor deposited ultrathin (1.5 nm) pseudomorphic InP interface passivation layer (IPL) and a thin (5 nm) ZrO2 high-k dielectric. Reduction of the surface states on InP passivated GaAs...

  • Process Monitoring And Surface Characterization By XPS In A Semiconductor Fabrication Line. Cabuil, N.; Le Gouil, A.; Dickson, B.; Lagha, A.; Aminpur, M.; Chaton, C.; Royer, J.-C.; Doclot, O. // AIP Conference Proceedings;9/26/2007, Vol. 931 Issue 1, p191 

    This paper discusses the implementation of an X-ray Photoelectron Spectrometer as a tool for process monitoring and characterizing thin film chemical composition and thickness in a manufacturing environment. Process monitoring of ultra thin nitrided gate oxides is performed on monitor wafers...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics