An ultrathin Zr(Ge) alloy film as an exhaustion interlayer combined with Cu(Zr) seed layer for the Cu/porous SiOC:H dielectric integration

B. Liu; Z. X. Song; Y. H. Li; K. W. Xu
October 2008
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p174108
Academic Journal
A highly reliable interface of an ultrathin Zr(Ge) exhaustion interlayer between Cu(Zr) film and porous SiOC:H (p-SiOC:H) dielectric has been developed in the present work. After being processed at a moderate elevated temperature (say, 450 °C), a self-formed nanomultilayer of CuGex/ZrOx(ZrSiyOx) was produced at the interface of Cu(Zr)/p-SiOC:H film stacks, which showed strong ability to effectively hinder Cu atoms diffusion into p-SiOC:H film and free Si atoms diffusion into Cu film. The mechanism involving the thermal stability of the films system is analyzed based on detailed characterization studies.


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