In situ verification of single-domain III-V on Si(100) growth via metal-organic vapor phase epitaxy

Döscher, Henning; Hannappel, Thomas; Kunert, Bernardette; Beyer, Andreas; Volz, Kerstin; Stolz, Wolfgang
October 2008
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172110
Academic Journal
Reflectance anisotropy spectroscopy (RAS) was used in situ for the quantification of antiphase domains on surfaces of thin GaP films deposited onto Si(100) by metal-organic vapor phase epitaxy (MOVPE). The preparation of a single-domain GaP/Si(100) surface was determined via the analysis of RAS peak intensities in reference to the well-known P-rich surface reconstruction of homoepitaxially grown GaP(100). Both preprocessed Si(100) substrates and MOVPE as-grown GaP/Si(100) films were also characterized ex situ by atomic force microscopy to identify the formation of mono- and diatomic surface steps and to analyze of the domain distribution, respectively.


Related Articles

  • Lateral wavelength control of InAs/InGaAsP/InP (100) quantum dots in the 1.55 μm region by selective-area metal organic vapor-phase epitaxy. Zhou, D.; Anantathanasarn, S.; van Veldhoven, P. J.; van Otten, F. W. M.; Eijkemans, T. J.; de Vries, T.; Smalbrugge, E.; Nötzel, R. // Journal of Applied Physics;12/1/2006, Vol. 100 Issue 11, p113512 

    We report lateral wavelength control of InAs quantum dots (QDs) embedded in InGaAsP on InP (100) substrates by selective-area metal organic vapor-phase epitaxy (SA MOVPE). The technologically important 1.55 μm telecommunications wavelength region is assessed by the combination of ultrathin...

  • Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates. Lin, Meng-Hung; Wen, Hua-Chiang; Jeng, Yeau-Ren; Chou, Chang-Pin // Nanoscale Research Letters;Nov2010, Vol. 5 Issue 11, p1812 

    In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN) epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM) to determine the nanotribological behavior and deformation characteristics of the...

  • Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiNx interlayers. Neuschl, B.; Fujan, K. J.; Feneberg, M.; Tischer, I.; Thonke, K.; Forghani, K.; Klein, M.; Scholz, F. // Applied Physics Letters;11/8/2010, Vol. 97 Issue 19, p192108 

    In this study the optical properties of high quality c-plane AlGaN layers grown on c-plane sapphire by metal organic vapor phase epitaxy have been investigated. Submonolayers of SiNx have been deposited in situ to reduce the dislocation density. After subsequent AlGaN growth atomic force...

  • Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy. Yu, H. W.; Chang, E. Y.; Yamamoto, Y.; Tillack, B.; Wang, W. C.; Kuo, C. I.; Wong, Y. Y.; Nguyen, H. Q. // Applied Physics Letters;10/24/2011, Vol. 99 Issue 17, p171908 

    The growth of GaAs epitaxy on Ge/Si substrates with an arsenic prelayer grown with graded temperature ramped from 300 to 420 °C is investigated. It is demonstrated that the graded-temperature arsenic prelayer grown on a Ge/Si substrate annealed at 650 °C not only improves the surface...

  • Deep-level photoluminescence studies on Si-doped, metalorganic chemical vapor deposition grown AlxGa1-xAs. Visser, E. P.; Tang, X.; Wieleman, R. W.; Giling, L. J. // Journal of Applied Physics;3/1/1991, Vol. 69 Issue 5, p3266 

    Presents a study that performed a deep-level photoluminescence (PL) on silicon-doped, metal organic chemical vapor deposition grown Al[subx]Ga[sub1-x]As as a function of the growth parameters. Novel PL emissions for Al[subx]Ga[sub1-x]As that was recorded; Factors to which the systematic...

  • Silicon Ion Irradiation Effects on AlGaN/GaN Heterostructures Grown by Metalorganic Chemical Vapour Deposition. Manavaimaran, Balaji; Krishnan, Baskar // IETE Technical Review;Feb2016, Vol. 33 Issue 1, p50 

    Irradiation effects of 120 MeV silicon ion with the fluence of 5 × 1012ions/cm2at room temperature and low temperature (77 K) on AlGaN/GaN heterostructures have been studied to probe the radiation tolerance for space applications. XRD results explicitly showed there were no compositional...

  • Atomic ordering and domain structures in metal organic chemical vapor deposition grown InGaAs (001) layers. Seong, Tae-Yeon; Norman, A. G.; Booker, G. R.; Cullis, A. G. // Journal of Applied Physics;6/15/1994, Vol. 75 Issue 12, p7852 

    Examines atomic ordering and domain structures in metal organic chemical vapor deposition grown compound semiconductors. Importance of the epitaxial layers of compound semiconductors to optoelectronic and high speed microwave devices; Experimental details; Result of the study.

  • Preparation of P-rich InP surfaces via MOCVD and surface characterization in UHV. Hannappel, T.; Visbeck, S.; Knorr, K.; Mahrt, J.; Zorn, M.; Willig, F. // Applied Physics A: Materials Science & Processing;1999, Vol. 69 Issue 4, p427 

    Abstract. For the first time direct contamination-free transfer to UHV was achieved for the P-rich InP(100) surface that is the easiest to prepare and control in the MOCVD environment. To avoid contamination during transfer a commercial MOCVD apparatus was modified to allow for transfer of...

  • Semipolar single component GaN on planar high index Si(11h) substrates. Ravash, Roghaiyeh; Blaesing, Juergen; Dadgar, Armin; Krost, Alois // Applied Physics Letters;10/4/2010, Vol. 97 Issue 14, p142102 

    We present metal organic vapor phase epitaxy growth of polarization reduced, single component GaN on nonpatterned Si(112), Si(113), Si(114), Si(115), and Si(116) substrates. We find that the inclination angle of GaN c-axis with respect to the surface normal depends on the angle between Si(111)...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics