TITLE

In situ verification of single-domain III-V on Si(100) growth via metal-organic vapor phase epitaxy

AUTHOR(S)
Döscher, Henning; Hannappel, Thomas; Kunert, Bernardette; Beyer, Andreas; Volz, Kerstin; Stolz, Wolfgang
PUB. DATE
October 2008
SOURCE
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reflectance anisotropy spectroscopy (RAS) was used in situ for the quantification of antiphase domains on surfaces of thin GaP films deposited onto Si(100) by metal-organic vapor phase epitaxy (MOVPE). The preparation of a single-domain GaP/Si(100) surface was determined via the analysis of RAS peak intensities in reference to the well-known P-rich surface reconstruction of homoepitaxially grown GaP(100). Both preprocessed Si(100) substrates and MOVPE as-grown GaP/Si(100) films were also characterized ex situ by atomic force microscopy to identify the formation of mono- and diatomic surface steps and to analyze of the domain distribution, respectively.
ACCESSION #
35279032

 

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