Rapid photoreflectance spectroscopy for strained silicon metrology

Chouaib, H.; Murtagh, M. E.; Guènebaut, V.; Ward, S.; Kelly, P. V.; Kennard, M.; Le Vaillant, Y. M.; Somekh, M. G.; Pitter, M. C.; Sharples, S. D.
October 2008
Review of Scientific Instruments;Oct2008, Vol. 79 Issue 10, p103106
Academic Journal
We present an improved photoreflectance (PR) spectroscopy technique upon the prior art in providing a rapid acquisition method of the PR spectrum in a simultaneous and multiplexed manner. Rapid PR (RPR) application is the on-line monitoring of strained silicon. Shrinkage in the silicon bandgap is measured and converted to strain, using theoretical models. Experimental RPR results are in good correlation with Raman spectroscopy.


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