TITLE

Electromigration saturation in a simple interconnect tree

AUTHOR(S)
Hau-Riege[a], Stefan P.; Thompson[b], Carl V.
PUB. DATE
September 2000
SOURCE
Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p2382
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the results of electromigration-saturation experiments carried out on passivated 'L'-shaped interconnects which had three contacts through W-filled vias at the ends of and at the corners of the L's. Applications of currents of different magnitudes and directions in the two limbs of the L's; Occurrence of variations in the steady-state electrical resistances.
ACCESSION #
3505844

 

Related Articles

  • In situ x-ray microscopic observation of the electromigration in passivated Cu interconnects. Schneider, G.; Hambach, D.; Niemann, B.; Kaulich, B.; Susini, J.; Hoffmann, N.; Hasse, W. // Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1936 

    X-ray imaging of electromigration in a passivated Cu interconnect was performed with 100-nm spatial resolution. A time sequence of 200 images, recorded with the European Synchrotron Radiation Facility x-ray microscope in 2.2 h at 4 keV photon energy, visualizes the mass flow of Cu at current...

  • Governing parameter for electromigration damage in the polycrystalline line covered with a passivation layer. Sasagawa, Kazuhiko; Hasegawa, Masataka; Saka, Masumi; Abe´, Hiroyuki // Journal of Applied Physics;2/15/2002, Vol. 91 Issue 4, p1882 

    A governing parameter, called AFD[sub gen][sup *], which reflects electromigration damage in a polycrystalline line covered with a passivation layer is proposed. The formulation is based on the parameter AFD[sub gen] previously introduced in our studies. With the help of AFD[sub gen] we can...

  • Electromigration behavior of lead-free solder flip chip bumps on NiP/Cu metallization. Jang, J. W.; Ramanathan, L. N.; Frear, D. R. // Journal of Applied Physics;Jun2008, Vol. 103 Issue 12, p123506 

    The electromigration behavior of Sn–2.5Ag and Sn–0.7Cu (in wt %) flip chip solder joints on electroless NiP/Cu metallization at a current density of 1.3×104 A/cm2 was studied. For Sn-2.5 Ag solder, electromigration at 115 °C for 250 h showed a selective dissolution of Ni...

  • A comparative study of GaSb (100) surface passivation by aqueous and nonaqueous solutions. Liu, Z.Y.; Kuech, T.F.; Saulys, D.A. // Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2587 

    We report a nonaqueous passivation regime consisting of Na[sub 2]S/benzene/15-crown-5/oxidant. The use of a nonpolar, aprotic organic medium required the addition of a specific chelating agent (15-crown-5) to solubilize sodium sulfide, and organic oxidizing agents (anthraquinone, benzophenone,...

  • A field-sensitive photoconductive probe for sampling through passivation layers. Hwang, Jiunn-Ren; Lai, Richard K.; Nees, John; Norris, Ted; Whitaker, John F. // Applied Physics Letters;10/7/1996, Vol. 69 Issue 15, p2211 

    A field-sensitive photoconductive sampling technique has been demonstrated in measurements performed through an insulating layer without the need for conductive contact. Sampled signals are sensed by a virtual-ground, floating-gate amplifier without draining charge from the device under test or...

  • Hydrogen passivation of Ca acceptors in GaN. Lee, J.W.; Pearton, S.J. // Applied Physics Letters;4/8/1996, Vol. 68 Issue 15, p2102 

    Describes the hydrogen passivation of calcium acceptors in gallium nitride. Reversal of the passivation process by posthydrogenation annealing; Thermal stability of the passivation; Standard conditions for the occurrence of passivation/reduction.

  • Passive components. Blank, Irene // ECN: Electronic Component News;Jun98, Vol. 42 Issue 6, p71 

    Presents electronic passive components from several companies in the United States as of June 1998. Includes interdigitated capacitor; Resistor-on-aluminum technology for aluminum applications; Ceramic bandpass filters.

  • Passive components. Blank, Irene // ECN: Electronic Component News;Jun98, Vol. 42 Issue 6, p75 

    Presents electronic passive equipment from several companies as of June 1998. Includes precision resistor termination network; Filters; Line capacitors.

  • Highly sensitive NpnP optoelectronic switch by AlAs regrowth. Kuijk, M.; Heremans, P.; Borghs, G. // Applied Physics Letters;7/29/1991, Vol. 59 Issue 5, p497 

    Examines the sensitivity of NpnP optoelectric switching device with low holding power by passivation. Observation of extreme optical sensitivity; Application of light illumination to decrease the breakover voltage; Reduction of surface generation/recombination currents at the edges of the device.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics