Electron irradiation of AlGaN/GaN and AlN/GaN heterojunctions

Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Markov, A. V.; Pearton, S. J.; Dabiran, A. M.; Wowchak, A. M.; Cui, B.; Osinsky, A. V.; Chow, P. P.; Kolin, N. G.; Boiko, V. M.; Merkurisov, D. I.
October 2008
Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p152101
Academic Journal
The effects of 10 MeV electron irradiation on AlGaN/GaN and AlN/GaN heterojunctions grown by molecular beam epitaxy are reported. The irradiation increases the resistivity of the GaN buffer due to compensation by radiation defects with levels near Ec-1 eV and decreases the mobility of the two-dimensional electron gas (2DEG) near the AlGaN/GaN (or AlN/GaN) interface. The bulk carrier removal rate in the GaN buffer is the same for both types of structures and similar to carrier removal rates for undoped n-GaN films. In structures with a density of residual donors of ∼1015 cm-3, irradiation with electron doses of ∼5×1015 cm-2 renders the buffer semi-insulating. The 50% degradation of the 2DEG conductivity happens at several times higher doses (close to 3×1016 cm-2 versus 6.5×1015 cm-2) for AlN/GaN than for AlGaN/GaN structures, most likely because of the lower thickness of the AlN barrier.


Related Articles

  • Low-Base-Resistance InP/InGaAs Heterojunction Bipolar Transistors with a Compositionally Graded-Base Structure. Ouchi, K.; Ohta, H.; Kudo, M.; Mishima, T. // Journal of Electronic Materials;Jul2005, Vol. 34 Issue 7, p1030 

    To reduce base resistance of an InP/InGaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy, the doping characteristics of carbon-doped InGaAs and the dependence of doping concentration on current gain were investigated. Using a thicker graded base was found to...

  • Photovoltaic effects and its oxygen content dependence in BaTiO3-δ/Si heterojunctions. Jie Xing; Kui-Juan Jin; Huibin Lu; Meng He; Guozhen Liu; Jie Qiu; Guozhen Yang // Applied Physics Letters;2/18/2008, Vol. 92 Issue 7, p071113 

    Three oxide heterojunctions made of BaTiO3-δ/Si have been fabricated under various oxygen pressures by laser molecular beam epitaxy. They all exhibited nonlinear and rectifying I-V characteristics but with a large difference in the rectification behaviors. Their photoelectric properties and...

  • Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si. Zhang, T. C.; Guo, Y.; Mei, Z. X.; Gu, C. Z.; Du, X. L. // Applied Physics Letters;3/16/2009, Vol. 94 Issue 11, p113508 

    Exploiting a double heterojunction of n-ZnO/insulator-MgO/p-Si grown by molecular beam epitaxy, a visible-blind ultraviolet (UV) photodetector has been fabricated. The photodetector shows a rectification ratio of ∼104 at ±2 V and a dark current of 0.5 nA at a reverse bias of -2 V.The...

  • 247 nm solar-blind ultraviolet p-i-n photodetector. Kuryatkov, V. V.; Borisov, B. A.; Nikishin, S. A.; Kudryavtsev, Yu.; Asomoza, R.; Kuchinskii, V. I.; Sokolovskii, G. S.; Song, D. Y.; Holtz, M. // Journal of Applied Physics;11/1/2006, Vol. 100 Issue 9, p096104 

    We describe solar-blind p-i-n photodetectors based on short period superlattices of AlN/Al0.08Ga0.92N. The devices are grown using gas source molecular beam epitaxy with ammonia on transparent sapphire substrates. The cutoff wavelength for the device is 247 nm. For diodes with 150 μm diameter...

  • Spatially direct and indirect transitions of self-assembled GeSi/Si quantum dots studied by photoluminescence excitation spectroscopy. Adnane, B.; Karlsson, K. F.; Hansson, G. V.; Holtz, P. O.; Ni, W.-X. // Applied Physics Letters;5/3/2010, Vol. 96 Issue 18, p181107 

    Well-resolved photoluminescence excitation (PLE) spectra are reported for self-assembled GeSi dots grown on Si(001) by molecular beam epitaxy. The observation of two excitation resonance peaks is attributed to two different excitation/de-excitation routes of interband optical transitions...

  • Reflection high-energy electron diffraction [lowercase_phi_synonym] scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy. Gao, Cunxu; Schönherr, Hans-Peter; Brandt, Oliver // Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p031906 

    The heteroepitaxial growth of Fe films on GaN(0001) by molecular beam epitaxy is monitored in situ by reflection high-energy electron diffraction [lowercase_phi_synonym] scans. The complex epitaxial orientation-relationship between Fe and GaN can be visualized by these [lowercase_phi_synonym]...

  • Atomic structure of postgrowth annealed epitaxial Fe/(001)GaAs interfaces. LeBeau, James M.; Hu, Qi O.; Palmstrøm, Christopher J.; Stemmer, Susanne // Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p121909 

    The interfacial atomic structure of epitaxial Fe films grown by molecular beam epitaxy on c(4×4) reconstructed (001) GaAs was investigated using high-angle annular dark-field imaging in scanning transmission electron microscopy. No extended interfacial reaction phase is observed and the...

  • Molecular-Dynamics Study of the Features of Dynamic Vortex Structure Formation in a Material with Micropores under High-Rate Deformation Conditions. Dmitriev, A. I.; Psakhie, S. G. // Technical Physics Letters;Jan2005, Vol. 31 Issue 1, p84 

    The response of a material containing a system of micropores subjected to high-rate shear deformation has been computer-simulated by methods of molecular dynamics. Deformation of such materials is accompanied by the formation of vortexlike dynamic defects. This process can be divided into three...

  • Effects of irradiation on the mechanical behavior of twined SiC nanowires. Jin, Enze; Niu, Li-Sha; Lin, Enqiang; Duan, Zheng // Journal of Applied Physics;Mar2013, Vol. 113 Issue 10, p104309 

    Irradiation is known to bring new features in one-dimensional nano materials. In this study, we used molecular dynamics simulations to investigate the irradiation effects on twined SiC nanowires. Defects tend to accumulate from outside toward inside of the twined SiC nanowires with increasing...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics