TITLE

Electron irradiation of AlGaN/GaN and AlN/GaN heterojunctions

AUTHOR(S)
Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Markov, A. V.; Pearton, S. J.; Dabiran, A. M.; Wowchak, A. M.; Cui, B.; Osinsky, A. V.; Chow, P. P.; Kolin, N. G.; Boiko, V. M.; Merkurisov, D. I.
PUB. DATE
October 2008
SOURCE
Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p152101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of 10 MeV electron irradiation on AlGaN/GaN and AlN/GaN heterojunctions grown by molecular beam epitaxy are reported. The irradiation increases the resistivity of the GaN buffer due to compensation by radiation defects with levels near Ec-1 eV and decreases the mobility of the two-dimensional electron gas (2DEG) near the AlGaN/GaN (or AlN/GaN) interface. The bulk carrier removal rate in the GaN buffer is the same for both types of structures and similar to carrier removal rates for undoped n-GaN films. In structures with a density of residual donors of ∼1015 cm-3, irradiation with electron doses of ∼5×1015 cm-2 renders the buffer semi-insulating. The 50% degradation of the 2DEG conductivity happens at several times higher doses (close to 3×1016 cm-2 versus 6.5×1015 cm-2) for AlN/GaN than for AlGaN/GaN structures, most likely because of the lower thickness of the AlN barrier.
ACCESSION #
34984757

 

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