Buried melting in germanium implanted silicon by millisecond flash lamp annealing

Voelskow, Matthias; Yankov, Rossen; Skorupa, Wolfgang; Pezoldt, Jörg; Kups, Thomas
October 2008
Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p151903
Academic Journal
Flash lamp annealing in the millisecond range has been used to induce buried melting in silicon. For this purpose high dose high-energy germanium implantation has been employed to lower the melting temperature of silicon in a predetermined depth region. Subsequent flash lamp treatment at high energy densities leads to local melting of the germanium rich layer. The thickness of the molten layer has been found to depend on the irradiation energy density. During the cool-down period, epitaxial crystallization takes place resulting in a largely defect-free layer.


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