Improved characteristics and issues of m-plane InGaN films grown on low defect density m-plane freestanding GaN substrates by metalorganic vapor phase epitaxy

Chichibu, S. F.; Yamaguchi, H.; Zhao, L.; Kubota, M.; Onuma, T.; Okamoto, K.; Ohta, H.
October 2008
Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p151908
Academic Journal
Improved quantum efficiency and short radiative lifetime were demonstrated for the near-band-edge emission of nearly stacking-fault-free, 200–250-nm-thick, m-plane pseudomorphic InxGa1-xN (010) diffraction with 〈0001〉 and 〈1120〉 azimuths, respectively, and 80 arcsec for the (1012) diffraction. As the surface flatness was improved, the incorporation efficiency of In was lower than the cases for c-plane growth and m-plane growth on a defective GaN substrate, according to nonidentical surface kinetics and absence of inclined/tilted planes, respectively.


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