TITLE

Glass supported ZnSe microring strongly coupled to a single CdSe quantum dot

AUTHOR(S)
Renner, Johannes; Worschech, Lukas; Forchel, Alfred; Mahapatra, Suddhasatta; Brunner, Karl
PUB. DATE
October 2008
SOURCE
Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p151109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
By means of molecular beam epitaxy a single layer of self-assembled CdSe quantum dots (QDs) embedded in a ZnSe/ZnMgSSe heterostructure was grown on a GaAs substrate. Electron beam lithography and etching techniques were then applied to pattern microrings. Afterward the microstructures were glued on a glass support and the GaAs was totally removed. The photoluminescence of such glass supported rings was studied for different temperatures, and tuning of single QD lines into resonance with a cavity photon mode was achieved. Strong coupling was found with a Rabi splitting of 0.7 meV attributed to the strong oscillator strength of CdSe quantum dots.
ACCESSION #
34984730

 

Related Articles

  • In situ observation of Zn-induced etching during CdSe quantum dot formation using time-resolved ellipsometry. Kruse, Carsten; Gartner, Mariuca; Gust, Arne; Hommel, Detlef // Applied Physics Letters;5/28/2007, Vol. 90 Issue 22, p221102 

    A combined segregation and desorption process has been observed in situ by ellipsometry in real-time during overgrowth of a CdSe layer by a ZnSe cap layer using migration enhanced epitaxy. This segregation enhanced etching of CdSe during Zn deposition is known to play an important role in the...

  • Mechanism of photoinduced luminescence degradation CdS...Se... quantum dots. Kunets, V. P.; Kulish, N. R.; Lisitsa, M. P.; Bryksa, V. P. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2003, Vol. 6 Issue 3, p299 

    A possible mechanism of the photoinduced luminescence degradation in the hexagonal CdSXSe1-X quantum dots synthesized in a glass matrix is discussed using luminescence decay kinetic investigations and ab initio calculations of chemical bond energies at the boundary between CdSe cluster and SiOX...

  • Temperature-dependent photoluminescence of ZnSe/ZnS quantum dots fabricated under the Stranski–Krastanov mode. Kim, Y.G.; Joh, Y.S.; Song, J.H.; Baek, K.S.; Chang, S.K.; Sim, E.D. // Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2656 

    Self-assembled ZnSe/ZnS quantum dots (QDs) have been grown in the Stranski–Krastanov (S–K) mode using a metalorganic chemical vapor deposition technique under the atomic-layer epitaxy mode. Atomic-force-microscopy measurements on the uncapped ZnSe/ZnS QDs reveal that lens-shaped...

  • Intermittent photoluminescence and thermal ionization of ZnCdSe/ZnSe quantum dots grown by molecular beam epitaxy. Zhang, B. P.; Li, Y. Q.; Yasuda, T.; Wang, W. X.; Segawa, Y.; Edamatsu, K.; Itoh, T. // Applied Physics Letters;8/31/1998, Vol. 73 Issue 9 

    We report the intermittent photoluminescence of ZnCdSe quantum dots (QDs) embedded in a ZnSe matrix grown by molecular beam epitaxy. The luminous time of the QD is strongly dependent on temperature but not on excitation intensity. This indicates that the ionization of the QDs is determined...

  • Formation of CdSe quantum dots on homoepitaxial ZnSe. Sadofev, S.; Blumstengel, S.; Henneberger, F. // Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3678 

    CdSe quantum dots were prepared by molecular beam epitaxy on homoepitaxially grown ZnSe (001) via thermally activated reorganization of an initially two-dimensional film. In spite of the difficulties related to the ZnSe substrate treatment prior to the epitaxial growth, atomically smooth sample...

  • Single-electron charging of a self-assembled II–VI quantum dot. Seufert, J.; Rambach, M.; Bacher, G.; Forchel, A.; Passow, T.; Hommel, D. // Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3946 

    We have studied single-electron injection into individual self-assembled CdSe/ZnSe quantum dots. Using nanostructured contacts to apply a vertical electric field, excess electrons are promoted to the single-quantum-dot ground state in a controlled fashion. Spatially-resolved photoluminescence...

  • Photothermal deflection and photoluminescence studies of CdS and CdSe quantum dots. Yuang, Yu-Shen; Chen, Yang-Fang; Lee, Yang-Yao; Liu, Li-Chi // Journal of Applied Physics;9/1/1994, Vol. 76 Issue 5, p3041 

    Discusses a study on the observation of the quantum confinement effect by using photothermal deflection spectroscopy and photoluminescence experiments of cadmium sulphide and cadmium selenide quantum dots. Analysis of quantum confinement effect; Measurement of absorption spectra; Source of...

  • Formation mechanism and properties of CdSe quantum dots on ZnSe by low temperature epitaxy and in situ annealing. Mahapatra, S.; Kiessling, T.; Margapoti, E.; Astakhov, G. V.; Ossau, W.; Worschech, L.; Forchel, A.; Brunner, K. // Applied Physics Letters;7/24/2006, Vol. 89 Issue 4, p043102 

    The formation mechanism of CdSe quantum dots (QDs) on ZnSe by low temperature epitaxial growth of a CdSe layer and its subsequent in situ annealing at a higher temperature has been studied. By this method, a small postgrowth residue of mobile adatoms nucleates distinct, stable, three-dimensional...

  • Photo-oxidation-enhanced coupling in densely packed CdSe quantum-dot films. Wang, Xiaoyong; Zhang, Jiayu; Nazzal, Amjad; Xiao, Min // Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p162 

    Photo-oxidation of densely packed monolayer of CdSe quantum dots (QDs) was studied by time-resolved photoluminescence (PL) spectroscopy. Electrons yielded in QDs by the strong laser-pulse irradiation can assist the oxidation of CdSe QDs. Such rapid photo-oxidation does not introduce more...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics