TITLE

Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors

AUTHOR(S)
Son, S. Y.; Choi, Y. S.; Kumar, P.; Park, H. W.; Nishida, T.; Singh, R. K.; Thompson, S. E.
PUB. DATE
October 2008
SOURCE
Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p153505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Uniaxial-mechanical-stress altered gate leakage current and dielectric constant of silicon metal-oxide-semiconductor (MOS) devices with nitrided Hf-silicate (HfSiON) dielectric are measured as a function of uniaxial stress applied using four-point wafer bending along the [110] direction. The gate leakage current and dielectric constant are found to increase by ∼2% per 100 MPa of tensile and compressive stresses. A decrease in hole trap activation energy in hafnium oxide-based dielectric is used to explain the mechanical stress altered gate leakage. It is proposed that the HfSiON dielectric constant increase results from band gap narrowing caused by strain induced N p band splitting.
ACCESSION #
34984712

 

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