Distribution of point defects in orientation-patterned GaAs crystals: A cathodoluminescence study

Faye, D.; Grisard, A.; Lallier, E.; Gérard, B.; Avella, M.; Jimenez, J.
October 2008
Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p151115
Academic Journal
Toward efficient generation of tunable IR signals by quasi-phase-matched nonlinear optical frequency conversion, orientation-patterned GaAs crystals (OP-GaAs) were grown by hydride vapor phase epitaxy on lithographically prepared templates. The cathodoluminescence technique was used to study these epitaxial thick films, consisting of periodic domains of inverted crystallographic orientation, (001)/(00-1). The distribution of the main defects incorporated during growth is presented. One demonstrates that point defects, such as VGa complexes, can contribute to the optical losses of thick OP-GaAs crystals.


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