TITLE

Electroluminescence from silicon-rich nitride/silicon superlattice structures

AUTHOR(S)
Warga, J.; Li, R.; Basu, S. N.; Dal Negro, L.
PUB. DATE
October 2008
SOURCE
Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p151116
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Luminescent silicon-rich nitride/silicon superlattice structures (SRN/Si-SLs) with different silicon concentrations were fabricated by direct magnetron cosputtering deposition. Rapid thermal annealing at 700 °C resulted in the nucleation of small amorphous Si clusters that emit at 800 nm under both optical and electrical excitations. The electrical transport mechanism and the electroluminescence (EL) of SRN/Si-SLs have been investigated. Devices with low turn-on voltage (6 V) have been demonstrated and the EL mechanism has been attributed to bipolar recombination of electron-hole pairs at Si nanoclusters. Our results demonstrate that amorphous Si clusters in SRN/Si-SLs provide a promising route for the fabrication of Si-compatible optical devices.
ACCESSION #
34984687

 

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