Realization of defect-free epitaxial core-shell GaAs/AlGaAs nanowire heterostructures

Tambe, Michael J.; Lim, Sung Keun; Smith, Matthew J.; Allard, Lawrence F.; Gradecˇak, Silvija
October 2008
Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p151917
Academic Journal
We report the controlled growth of vertically aligned GaAs/AlGaAs core-shell nanowires. By optimizing the shell deposition temperature and catalyst density we maintain high temperature stability and achieve defect-free epitaxial AlGaAs shell deposition with high aluminum incorporation. Energy dispersive x-ray analysis determines the shell composition to be Al0.9Ga0.1As and measures the uniformity of the shell thickness. Lattice-resolved high-angle annular dark-field scanning transmission electron microscopy images confirm the core-shell interface to be defect-free, epitaxial, and atomically sharp. The ability to realize GaAs/AlGaAs core-shell nanowires with precise control over the morphology and composition is essential to the development of nanowire-based high mobility electronics.


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