Internal gettering of iron in multicrystalline silicon at low temperature

Krain, Rafael; Herlufsen, Sandra; Schmidt, Jan
October 2008
Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p152108
Academic Journal
The interstitial iron concentration in multicrystalline silicon wafers, determined from recombination lifetime measurements, is effectively reduced by annealing the wafers at very low temperature (300–500 °C). During annealing, the iron concentration decreases by more than one order of magnitude. The observed disappearance of interstitial iron is explained by internal gettering of the iron by crystallographic defects.


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