TITLE

Internal gettering of iron in multicrystalline silicon at low temperature

AUTHOR(S)
Krain, Rafael; Herlufsen, Sandra; Schmidt, Jan
PUB. DATE
October 2008
SOURCE
Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p152108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The interstitial iron concentration in multicrystalline silicon wafers, determined from recombination lifetime measurements, is effectively reduced by annealing the wafers at very low temperature (300–500 °C). During annealing, the iron concentration decreases by more than one order of magnitude. The observed disappearance of interstitial iron is explained by internal gettering of the iron by crystallographic defects.
ACCESSION #
34984680

 

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