Comment on “Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrate” [Appl. Phys. Lett. 90, 083507 (2007)]

Zhiwen Zhou; Cheng Li; Songyan Chen; Hongkai Lai; Jinzhong Yu
October 2008
Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p156102
Academic Journal
In a recent letter, Hsieh et al. reported the growth of high-quality Ge epilayers with a SiGe buffer thickness of only 0.45 μm, a surface root-mean-square roughness of less than 0.4 nm, and a threading dislocation of 7.6×106 cm-2 on Si+ pre-ion-implantation Si substrate utilizing of strain relaxation enhancement by point defects and interface blocking of the dislocations. Our comment has focused on x-ray diffraction data shown in Fig. 3 of Ref. 1. We demonstrate that the strain in Ge epilayers is tensile, rather than compressive as misunderstood by the authors.


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