Phase separation and optical properties in oxygen-rich InN films

Dixit, A.; Sudakar, C.; Naik, R.; Lawes, G.; Thakur, J. S.; McCullen, E. F.; Auner, G. W.; Naik, V. M.
October 2008
Applied Physics Letters;10/6/2008, Vol. 93 Issue 14, p142103
Academic Journal
We have investigated the properties of sputter deposited InN thin films prepared from an In-metal (InN-MT) and an In2O3 target (InN-OT). The excess oxygen present in the InN-OT films alters the microstructure by introducing additional disorder. Depth dependent x-ray photoelectron spectroscopy measurements indicate the presence of higher concentrations of oxygen in InN-OT. Raman spectra show evidence for the presence of an In2O3 secondary phase in both samples. Although the InN-OT film has a higher oxygen concentration, both films show similar electrical and optical properties.


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