Gated armchair nanotube and metallic field effect

Ren, Wei; Cho, T. H.; Leung, T. C.; Chan, C. T.
October 2008
Applied Physics Letters;10/6/2008, Vol. 93 Issue 14, p142102
Academic Journal
We propose a useful metallic field effect element based on the electric field control of armchair single-wall carbon nanotube. The electron conduction channels are enhanced by imposing a transverse gate voltage. Multiple Dirac points have been revealed theoretically by our density functional and tight binding calculations. Our electron transport results show that the performance of such unique transistors depends mainly on the diameter of nanotube exploited. The critical field strength required decreases rapidly with the tube diameter.


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