TITLE

Defect-free ZnSe nanowire and nanoneedle nanostructures

AUTHOR(S)
Aichele, Thomas; Tribu, Adrien; Bougerol, Catherine; Kheng, Kuntheak; André, Régis; Tatarenko, Serge
PUB. DATE
October 2008
SOURCE
Applied Physics Letters;10/6/2008, Vol. 93 Issue 14, p143106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the growth of ZnSe nanowires and nanoneedles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn–Se flux ratio. By employing a combined MBE growth of nanowires and nanoneedles without any postprocessing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electron microscopy and by photoluminescence studies.
ACCESSION #
34850472

 

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