Nonlinear characteristics of the hysteretic magnetoresistance of a hybrid nanomagnetic field-effect transistor

Bae, J.-U.; Lin, T.-Y.; Reno, J. L.; Bird, J. P.
October 2008
Applied Physics Letters;10/6/2008, Vol. 93 Issue 14, p143109
Academic Journal
We analyze the influence of applied source-drain bias (Vsd) on the magnetoresistance (MR) of a field-effect transistor (FET) whose gate is formed by a nanoscale magnet. Using an external magnetic field to modulate the fringing magnetic fields that emanate into the channel of the hybrid FET from its gate, we observe a strongly hysteretic MR that is suppressed by the application of Vsd. Our analysis suggests that the effect of Vsd is to reduce the effective barrier in the channel and that the tunneling/activated MR is quenched due to the associated increase in carrier transmission.


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