High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

Neufeld, Carl J.; Toledo, Nikholas G.; Cruz, Samantha C.; Iza, Michael; DenBaars, Steven P.; Mishra, Umesh K.
October 2008
Applied Physics Letters;10/6/2008, Vol. 93 Issue 14, p143502
Academic Journal
We report on III-nitride photovoltaic cells with external quantum efficiency as high as 63%. InxGa1-xN/GaN p-i-n double heterojunction solar cells are grown by metal-organic chemical vapor deposition on (0001) sapphire substrates with xIn=12%. A reciprocal space map of the epitaxial structure showed that the InGaN was coherently strained to the GaN buffer. The solar cells have a fill factor of 75%, short circuit current density of 4.2 mA/cm2, and open circuit voltage of 1.81 V under concentrated AM0 illumination. It was observed that the external quantum efficiency can be improved by optimizing the top contact grid.


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