Enhancing electron transport in Si:P delta-doped devices by rapid thermal anneal

Goh, K. E. J.; Augarten, Y.; Oberbeck, L.; Simmons, M. Y.
October 2008
Applied Physics Letters;10/6/2008, Vol. 93 Issue 14, p142105
Academic Journal
We address the use of rapid thermal anneal (RTA) to enhance electron mobility and phase coherent transport in Si:P δ-doped devices encapsulated by low temperature Si molecular beam epitaxy while minimizing dopant diffusion. RTA temperatures of 500–700 °C were applied to δ-doped layers encapsulated at 250 °C. From 4.2 K magnetotransport measurements, we find that the improved crystal quality after RTA increases the mobility/mean free path by ∼40% and the phase coherence length by ∼25%. Our results suggest that the initial capping layer has near optimal crystal quality and transport improvement achieved by a RTA is limited.


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