Charging effect of Al2O3 thin films containing Al nanocrystals

Liu, Y.; Chen, T. P.; Zhu, W.; Yang, M.; Cen, Z. H.; Wong, J. I.; Li, Y. B.; Zhang, S.; Chen, X. B.; Fung, S.
October 2008
Applied Physics Letters;10/6/2008, Vol. 93 Issue 14, p142106
Academic Journal
In this work, Al2O3 thin film containing Al nanocrystals (nc-Al) is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. Both electron and hole trapping in nc-Al are observed. The charge storage ability of the nc-Al/Al2O3 thin films provides the possibility of memory applications. Charging in the nc-Al also leads to a change in the dc resistance of the thin films, namely, the electron trapping in the nc-Al leads to an increase in the resistance, whereas the resistance is reduced if there is hole trapping in the nc-Al.


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