Single-dot optical emission from ultralow density well-isolated InP quantum dots

Ugur, A.; Hatami, F.; Masselink, W. T.; Vamivakas, A. N.; Lombez, L.; Atatüre, M.
October 2008
Applied Physics Letters;10/6/2008, Vol. 93 Issue 14, p143111
Academic Journal
We demonstrate a straightforward way to obtain single well-isolated quantum dots emitting in the visible part of the spectrum and characterize the optical emission from single quantum dots using this method. Self-assembled InP quantum dots are grown using gas-source molecular-beam epitaxy over a wide range of InP deposition rates, using an ultralow growth rate of about 0.01 atomic monolayers/s, a quantum-dot density of 1 dot/μm2 is realized. The resulting isolated InP quantum dots embedded in an InGaP matrix are individually characterized without the need for lithographical patterning and masks on the substrate. Such low-density quantum dots show excitonic emission at around 670 nm with a linewidth limited by instrument resolution. This system is applicable as a single-photon source for applications such as quantum cryptography.


Related Articles

  • InAs self-assembled quantum dots on InP by molecular beam epitaxy. Fafard, S.; Wasilewski, Z. // Applied Physics Letters;2/12/1996, Vol. 68 Issue 7, p991 

    Examines the indium arsenide self-assembled quantum dots (QD) on indium phosphide substrate by molecular beam epitaxy. Range of the spectral region; Characterization of QD using photoluminescence and transmission electron microscopy; Influence of buffer layer on the island formation of residual...

  • Porous InP array-directed assembly of InAs nanostructure. Xiao-Ling Che; Lu Li; Feng-Qi Liu; Xiu-Qi Huang; Zhan-Guo Wang // Applied Physics Letters;6/26/2006, Vol. 88 Issue 26, p263107 

    Fascinating features of porous InP array-directed assembly of InAs nanostructures are presented. Strained InAs nanostructures are grown by molecular-beam epitaxy on electrochemical etched porous InP substrate. Identical porous substrate with different pore depths defines different growth modes....

  • Direct formation of InAs quantum dots grown on InP (001) by solid-source molecular beam epitaxy. Fuster, David; Rivera, Antonio; Alén, Benito; Alonso-Gonz&x00E1;lez, Pablo; González, Yolanda; González, Luisa // Applied Physics Letters;3/30/2009, Vol. 94 Issue 13, p133106 

    We have developed a growth process that leads to the direct formation of self-assembled InAs quantum dots on InP(001) by solid-source molecular beam epitaxy avoiding the previous formation of quantum wires usually obtained by this technique. The process consists of a periodically alternated...

  • Quantum dot-like effect in InGaAs/GaAs quantum well. Abdellatif, M.H.; Song, J.D.; Choi, W.J.; Cho, N.K.; Lee, J.I. // European Physical Journal - Applied Physics;Aug2011, Vol. 55 Issue 2, pN.PAG 

    In0.18 Ga0.82As/GaAs quantum well sample is prepared by molecular beam epitaxy. The integrated photoluminescence dependence on the excitation power intensity is studied. The critical exciton temperature is found to be around 210 K. The high critical exciton temperature is due to the increased...

  • Contactless electroreflectance of CdSe/ZnSe quantum dots grown by molecular-beam epitaxy. Martín Muñoz, T.; Shiping Guo, T.; Xuecong Zhou; Tamargo, Maria C.; Huang, Y. S.; Trallero-Giner, C.; Rodríguez, A. H // Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4399 

    The interband transitions of a capped CdSe quantum-dot structure have been investigated using contactless electroreflectance. The electroreflectance spectrum shows transitions originating from all the portions of the sample including the quantum dots and the wetting layer. The transitions of the...

  • Room temperature infrared photoresponse of self assembled Ge/Si (001) quantum dots grown by molecular beam epitaxy. Singha, R. K.; Manna, S.; Das, S.; Dhar, A.; Ray, S. K. // Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p233113 

    We report on the observation of intraband near infrared (∼3.1 μm) and mid infrared (∼6.2 μm) photocurrent response at room temperature using Ge/Si self-assembled quantum dots grown by molecular beam epitaxy. Due to the bimodal size distribution and SiGe intermixing,...

  • Demonstration of nanophotonic NOT gate using near-field optically coupled quantum dots. Kawazoe, T.; Kobayashi, K.; Akahane, K.; Naruse, M.; Yamamoto, N.; Ohtsu, M. // Applied Physics B: Lasers & Optics;Jul2006, Vol. 84 Issue 1/2, p243 

    We propose and demonstrate the operation of a nanometric optical NOT gate using CuCl quantum dots coupled via an optical near-field interaction. The device was smaller than 20 nm and its repeated operation was verified. The operating energy of this device was much lower than that of a...

  • Excited-state spectroscopy of identified Mg acceptor in InP. Beye, A. C.; Yamada, A.; Kamijoh, T.; Tanoue, H.; Mayer, K. M.; Ohnishi, N.; Shibata, H.; Makita, Y. // Applied Physics Letters;1/22/1990, Vol. 56 Issue 4, p349 

    Photoluminescence experiments under resonant excitation have been performed at low temperature in Mg+-implanted bulk InP. The energy difference between the ground 1S3/2 and excited 2S3/2 states of the Mg acceptor is accurately measured by two-hole spectroscopy of Mg-acceptor bound exciton....

  • Exciton and biexciton emission from a single InAs/InP quantum dash. Polish_hook, G.; Podemski, P.; Musiał, A.; Misiewicz, J.; Hein, S.; Höfling, S.; Forchel, A. // Journal of Applied Physics;Apr2009, Vol. 105 Issue 8, p086104 

    Molecular beam epitaxy grown InAs/InGaAlAs/InP quantum dashes designed for the 1.5 μm range were investigated by microphotoluminescence spectroscopy. The exciton and biexciton emission from a single quantum dash was detected revealing a biexciton binding energy of about 0.4 meV. The...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics