TITLE

Single-dot optical emission from ultralow density well-isolated InP quantum dots

AUTHOR(S)
Ugur, A.; Hatami, F.; Masselink, W. T.; Vamivakas, A. N.; Lombez, L.; Atatüre, M.
PUB. DATE
October 2008
SOURCE
Applied Physics Letters;10/6/2008, Vol. 93 Issue 14, p143111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate a straightforward way to obtain single well-isolated quantum dots emitting in the visible part of the spectrum and characterize the optical emission from single quantum dots using this method. Self-assembled InP quantum dots are grown using gas-source molecular-beam epitaxy over a wide range of InP deposition rates, using an ultralow growth rate of about 0.01 atomic monolayers/s, a quantum-dot density of 1 dot/μm2 is realized. The resulting isolated InP quantum dots embedded in an InGaP matrix are individually characterized without the need for lithographical patterning and masks on the substrate. Such low-density quantum dots show excitonic emission at around 670 nm with a linewidth limited by instrument resolution. This system is applicable as a single-photon source for applications such as quantum cryptography.
ACCESSION #
34850457

 

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