Fabrication and electrical characterization of Si-based rolled-up microtubes

Cavallo, F.; Songmuang, R.; Schmidt, O. G.
October 2008
Applied Physics Letters;10/6/2008, Vol. 93 Issue 14, p143113
Academic Journal
Freestanding SiGe:B/Si:B tubes are fabricated by rolled-up technology. Linear I-V curves are measured both for unreleased and rolled-up films. The bilayer resistance increases after release from the substrate. The electrical resistance of tubes with diameters varying in the range of 0.8-2.2 μm, scales from 110 to 9 kΩ as a function of bilayer thickness. Rapid thermal annealing is used to investigate the effect of B activation and Si–Ge interdiffusion on structural and electrical properties of unreleased and rolled-up films.


Related Articles

  • Characteristics of BF2, Ga and In implanted Si after FLA and RTA annealing. Wo, Bo; Matsunaga, Yusuke; Aid, Siti Rahmah Binti; Matsumoto, Satoru; Borland, John; Tanjyo, Masayasu // AIP Conference Proceedings;Nov2012, Vol. 1496 Issue 1, p179 

    The dopant diffusion, electrical activation, diode I-V characteristics and damage recovery of BF2, Ga and In implanted Si after annealing have been investigated for samples with the peak concentration of 1.0×1019 cm×3 as p-type dopant atoms. Within this concentration, Ga implanted...

  • Diffusion of gold in silicon during rapid thermal annealing: Effectiveness of the surface as a... Lerch, W.; Stolwijk, N.A. // Journal of Applied Physics;2/1/1998, Vol. 83 Issue 3, p1312 

    Presents a study which used rapid thermal annealing to conduct short-time diffusion experiments of gold in dislocation-free floating-zone silicon. Concentration-depth profile of the gold; How the gold specimens were prepared; Information on the global features of gold distributions.

  • Anomalous transient diffusion of boron implanted into preamorphized Si during rapid thermal annealing. Kim, Y. M.; Lo, G. Q.; Kwong, D. L.; Tseng, H. H.; Hance, R. // Applied Physics Letters;11/27/1989, Vol. 55 Issue 22, p2316 

    Diffusion of boron implanted into preamorphized silicon has been studied using secondary-ion mass spectroscopy and transmission electron microscopy. A surface preamorphized layer was created by double silicon ion implantation and the as-implanted boron profiles were confined completely within...

  • Space-charge oxidant diffusion model for rapid thermal oxidation of silicon. Kazor, A. // Journal of Applied Physics;2/15/1995, Vol. 77 Issue 4, p1477 

    Presents a study in which a model based on space-charge assisted diffusion of oxygen is proposed to describe the rapid thermal oxidation (RTD) kinetics of silicon in dry oxygen ambient. Introduction to RTD of silicon; Theory; Results & discussion.

  • Phosphorus diffusion into silicon from a spin-on source using rapid thermal processing. Hartiti, B.; Slaoui, A.; Muller, J. C.; Stuck, R.; Siffert, P. // Journal of Applied Physics;6/1/1992, Vol. 71 Issue 11, p5474 

    Presents a study which described the diffusion of phosphorus into silicon semiconductor from a doped spin-on source with the use of rapid thermal rapid processing. Characterization of the resulting diffused samples; Experimental procedures; Results and discussion.

  • Inhomogeneous defect activation by rapid thermal processes in silicon. Thuong-Quat, Vu; Eichhammer, W.; Siffert, P. // Applied Physics Letters;3/27/1989, Vol. 54 Issue 13, p1235 

    In silicon, rapid thermal processes are observed to induce recombination centers whose distribution as a function of the depth below the surfaces shows an extremum towards the middle of 1000-μm-thick samples. This nonhomogeneous defect activation is correlated to a surface effect....

  • High-concentration boron diffusion in silicon: Simulation of the precipitation phenomena. Solmi, S.; Landi, E.; Baruffaldi, F. // Journal of Applied Physics;10/1/1990, Vol. 68 Issue 7, p3250 

    Discusses an investigation on the diffusion of boron implanted at high concentration in preamorphized silicon for rapid thermal annealing and conventional furnace annealing. Trend of very-large-scale integration technology; Kinetics of precipitate growth; Essential driving force for a phase...

  • Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials–some comments. Karunaratne, M. S. A.; Bonar, J. M.; Ashburn, P.; Willoughby, A. F. W. // Journal of Materials Science;Feb2006, Vol. 41 Issue 3, p1013 

    The development of silicon-germanium alloys to extend the range of silicon high-frequency circuits has highlighted the need to understand diffusion mechanisms in this important material. To optimise performance, it is necessary to minimise the diffusion of dopants such as boron, in these very...

  • Evidence for a vacancy and interstitial mediated diffusion of As in Si and Si0.9Ge0.1. Uppal, Suresh; Willoughby, Arthur F. W.; Bonar, Janet M.; Zhang, Jing // Applied Physics Letters;7/26/2004, Vol. 85 Issue 4, p552 

    Arsenic diffusion has been studied at 1000°C in Si and relaxed Si0.9Ge0.1 structures grown using molecular beam epitaxy. Intrinsic diffusivity of As in Si0.9Ge0.1 is shown to be enhanced over Si by a factor of 2, in agreement with the literature. Using selective point defect injection,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics