Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate

Yin, Z. G.; Chen, N. F.; Li, Y.; Zhang, X. W.; Bai, Y. M.; Chai, C. L.; Xie, Y. N.; Zhang, J.
October 2008
Applied Physics Letters;10/6/2008, Vol. 93 Issue 14, p142109
Academic Journal
We have investigated the magnetic properties of Co-doped zinc oxide (ZnO) film deposited on silicon substrate by magnetron sputtering. Co ions have a valence of 2+ and substitute for Zn sites in the lattice. By using a chemical etching method, an extrinsic ferromagnetism was demonstrated. The observed ferromagnetism is neither associated with magnetic precipitates nor with contamination, but originates from the silicon/silicon oxide interface. This interface ferromagnetism is characterized by being temperature independent and by having a parallel magnetic anisotropy.


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