Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature

Cho, Doo-Hee; Yang, Shinhyuk; Byun, Chunwon; Shin, Jaeheon; Ryu, Min Ki; Park, Sang-Hee Ko; Hwang, Chi-Sun; Chung, Sung Mook; Cheong, Woo-Seok; Yoon, Sung Min; Chu, Hye-Yong
October 2008
Applied Physics Letters;10/6/2008, Vol. 93 Issue 14, p142111
Academic Journal
We have fabricated transparent bottom gate thin film transistors (TFTs) using Al-doped zinc tin oxide (AZTO) as active layers. The AZTO active layer was deposited by rf magnetron sputtering at room temperature. The AZTO TFT showed good TFT performance without postannealing. The field effect mobility and the subthreshold swing were improved by postannealing below 180 °C. The AZTO TFT exhibited a field effect mobility (μFET) of 10.1 cm2/V s, a turn-on voltage (Von) of 0.4 V, a subthreshold swing (S/S) of 0.6 V/decade, and an on/off ratio (Ion/Ioff) of 109.


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