TITLE

Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature

AUTHOR(S)
Cho, Doo-Hee; Yang, Shinhyuk; Byun, Chunwon; Shin, Jaeheon; Ryu, Min Ki; Park, Sang-Hee Ko; Hwang, Chi-Sun; Chung, Sung Mook; Cheong, Woo-Seok; Yoon, Sung Min; Chu, Hye-Yong
PUB. DATE
October 2008
SOURCE
Applied Physics Letters;10/6/2008, Vol. 93 Issue 14, p142111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have fabricated transparent bottom gate thin film transistors (TFTs) using Al-doped zinc tin oxide (AZTO) as active layers. The AZTO active layer was deposited by rf magnetron sputtering at room temperature. The AZTO TFT showed good TFT performance without postannealing. The field effect mobility and the subthreshold swing were improved by postannealing below 180 °C. The AZTO TFT exhibited a field effect mobility (μFET) of 10.1 cm2/V s, a turn-on voltage (Von) of 0.4 V, a subthreshold swing (S/S) of 0.6 V/decade, and an on/off ratio (Ion/Ioff) of 109.
ACCESSION #
34850426

 

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