Three photon absorption in silicon for 2300–3300 nm

Pearl, Shaul; Rotenberg, Nir; van Driel, Henry M.
September 2008
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p131102
Academic Journal
We measure the spectral dependence of the degenerate three photon absorption coefficient, γ, for a Si [100] wafer using 200 fs pulses in the range 2300–3300 nm, i.e., photon energy between half and one-third the indirect band gap. For pulses linearly polarized along the [001] crystal axis γ increases from a value of near 0 cm3/GW2 at 3300 nm to a peak value of 0.035 cm3/GW2 at 2700 nm before decreasing with shorter wavelength; this is consistent with the dispersion expected from allowed-allowed-allowed transitions. At 2600 nm the γ value is ∼30% larger for light polarized along [011] than along [001].


Related Articles

  • Ge-Photodetectors for Si-Based Optoelectronic Integration. Jian Wang; Sungjoo Lee // Sensors (14248220);2011, Vol. 11 Issue 1, p696 

    High speed photodetectors are a key building block, which allow a large wavelength range of detection from 850 nm to telecommunication standards at optical fiber band passes of 1.3-1.55 μm. Such devices are key components in several applications such as local area networks, board to board,...

  • Self-assembly of three-dimensional photonic crystals on structured silicon wafers. Ferrand, P.; Egen, M.; Griesebock, B.; Ahopelto, J.; Müller, M.; Zentel, R.; Romanov, S. G.; Sotomayor Torres, C. M. // Applied Physics Letters;10/7/2002, Vol. 81 Issue 15, p2689 

    The growth of an opal-like polymer photonic crystal (PhC) on deeply etched silicon wafers is reported. It is shown that 10 μm deep trenches, as narrow as 10 μm can be uniformly filled by self-assembly of microspheres, in a close-packed face-centered-cubic lattice. These observations are...

  • Photon Influence on P and B Diffusion. Aderhold, W.; Hunter, A.; Felch, S. B.; Ranish, J. // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p95 

    We investigate photon effects for two thermal processes: implanted dopant activation and diffusion; and silicon oxidation. Because the Applied Materials Radiance Plus RTP system heats only one side of the wafer with lamps, the thermal and photon effects are separable by changing the side of the...

  • Light trapping effect in silicon wafers with anodically etched surfaces. Krotkus, A.; Pacebutas, V.; Kavaliauskas, J.; Subacius, I.; Grigoras, K.; �imkiene, I. // Applied Physics A: Materials Science & Processing;1997, Vol. 64 Issue 4, p357 

    Spectral dependencies of the transmittivity and the photoresponse of silicon wafers one face of which was covered with a porous layer have been measured. These experiments had evidenced an increase of the light intensity absorbed in the wafer, which was largest at the wavelengths corresponding...

  • Silicon carbide-based photonic crystal nanocavities for ultra-broadband operation from infrared to visible wavelengths. Yamada, Shota; Song, Bong-Shik; Asano, Takashi; Noda, Susumu // Applied Physics Letters;11/14/2011, Vol. 99 Issue 20, p201102 

    To realize nanophotonic devices that operate in both the infrared and visible wavelength ranges on a single wafer, we investigated the optical characteristics of silicon carbide (SiC)-based photonic crystal nanocavities. By fabricating nanocavities with lattice constants ranging from 150 to 600...

  • Simulation of optical properties of silicon solar cells textured with penetrating V-shaped grooves. Untila, G.; Palov, A.; Poroykov, A.; Rakhimova, T.; Mankelevich, Yu.; Kost, T.; Chebotareva, A.; Dvorkin, V. // Semiconductors;Oct2011, Vol. 45 Issue 10, p1357 

    The coefficients of reflection ( R), transmission ( T), and absorption ( A) of light for two wavelengths λ = 1000 and 1100 nm for silicon wafers that have thicknesses t = 50, 100, and 200 μm and are textured with penetrating V-shaped grooves with various geometries have been calculated;...

  • Continuous-wave operation of electrically pumped, single-mode, edge-emitting photonic crystal Bragg lasers. Zhu, Lin; Sun, Xiankai; DeRose, Guy A.; Scherer, Axel; Yariv, Amnon // Applied Physics Letters;6/25/2007, Vol. 90 Issue 26, p261116 

    The authors demonstrate an electrically pumped, single-mode, large-area, edge-emitting InGaAsP/InP two dimensional photonic crystal Bragg laser operating in continuous-wave condition. The laser uses a weak index perturbed, polymer-planarized, surface photonic crystal structure to control the...

  • Vertically integrated double-layer on-chip silicon membranes for 1-to-12 waveguide fanouts. Zhang, Yang; Hosseini, Amir; Ahn, Jaehyun; Kwong, David N.; Fallahazad, Babak; Tutuc, Emanuel; Chen, Ray T. // Applied Physics Letters;4/30/2012, Vol. 100 Issue 18, p181102 

    We present an on-chip vertically integrated three-dimensional photonic integrated circuit. Double-layer 1 × 12 multimode interference (MMI) couplers are fabricated on silicon membranes using double-bonded silicon-on-insulator wafers. The input light is transverse electric polarized,...

  • Silicon-photonics light source realized by III-V/Si-grating-mirror laser. Chung, Il-Sug; Mo\rk, Jesper // Applied Physics Letters;10/11/2010, Vol. 97 Issue 15, p151113 

    A III-V/Si vertical-cavity in-plane-emitting laser structure is suggested and numerically investigated. This hybrid laser consists of a distributed Bragg reflector, a III-V active region, and a high-index-contrast grating (HCG) connected to an in-plane output waveguide. The HCG and the output...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics