TITLE

Three photon absorption in silicon for 2300–3300 nm

AUTHOR(S)
Pearl, Shaul; Rotenberg, Nir; van Driel, Henry M.
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p131102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We measure the spectral dependence of the degenerate three photon absorption coefficient, γ, for a Si [100] wafer using 200 fs pulses in the range 2300–3300 nm, i.e., photon energy between half and one-third the indirect band gap. For pulses linearly polarized along the [001] crystal axis γ increases from a value of near 0 cm3/GW2 at 3300 nm to a peak value of 0.035 cm3/GW2 at 2700 nm before decreasing with shorter wavelength; this is consistent with the dispersion expected from allowed-allowed-allowed transitions. At 2600 nm the γ value is ∼30% larger for light polarized along [011] than along [001].
ACCESSION #
34771959

 

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