TITLE

Polarization switching using single-walled carbon nanotubes grown on epitaxial ferroelectric thin films

AUTHOR(S)
Paruch, P.; Posadas, A.-B.; Dawber, M.; Ahn, C. H.; McEuen, P. L.
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p132901
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have directly grown single-walled carbon nanotubes on epitaxial BaTiO3 thin films, fabricating prototype carbon nanotube-ferroelectric devices. We demonstrate polarization switching using the nanotube as a local electric field source and compare the results to switching with an atomic force microscopy tip. The observed variation of domain growth rates in the two cases agrees with the changes in electric field intensity at the ferroelectric surface.
ACCESSION #
34771950

 

Related Articles

  • Domain switching of fatigued ferroelectric thin films. Yun Tak Lim; Jong Yeog Son; Young-Han Shin // Applied Physics Letters;5/12/2014, Vol. 104 Issue 19, p1 

    We investigate the domain wall speed of a ferroelectric PbZr0.48Ti0.52O3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of...

  • Atomic force microscopy-induced electric field in ferroelectric thin films. Biao Wang; Woo, C.H. // Journal of Applied Physics;9/15/2003, Vol. 94 Issue 6, p4053 

    Reports on the use of atomic force microscopy (SFM) to tailor and image ferroelectric domains in the submicron and nanometer ranges. Expression derived for the AFM-induced electric field in a ferroelectric thin film; Depolarization field created by polarization charges using the Green function...

  • Very large dielectric constant of highly oriented Pb[sub 1-x]Ba[sub x]TiO[sub 3] thin films prepared by chemical deposition. Pontes, F.M.; Leite, E.R.; Mambrini, G.P.; Escote, M.T.; Longo, E.; Varela, J.A. // Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p248 

    Highly (100) oriented Pb[sub 0.8]Ba[sub 0.2]TiO[sub 3]/LaNiO[sub 3] structures were grown on LaAlO[sub 3](100) substrates by using a wet, soft chemical method and crystallized by the microwave oven technique. The Au/PBT/LaNiO[sub 3]/LaAlO[sub 3] capacitor shows a hysteresis loop with remnant...

  • Giant tunnel electroresistance with PbTiO3 ferroelectric tunnel barriers. Crassous, A.; Garcia, V.; Bouzehouane, K.; Fusil, S.; Vlooswijk, A. H. G.; Rispens, G.; Noheda, B.; Bibes, M.; Barthélémy, A. // Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p042901 

    The persistency of ferroelectricity in ultrathin films allows their use as tunnel barriers. Ferroelectric tunnel junctions are used to explore the tunneling electroresistance effect—a change in the electrical resistance associated with polarization reversal in the ferroelectric barrier...

  • Generation of ferroelectric domains in films using atomic force microscope. Molotskii, M. // Journal of Applied Physics;1/1/2005, Vol. 97 Issue 1, p014109 

    Kinetics of domain formation in ferroelectric films subjected to electric field of atomic force microscope (AFM) is considered for a case of low reversal voltage. Dependence of equilibrium domain sizes on AFM and film parameters is defined. It is shown that formation of domains is possible if...

  • Alternating electric force microscopy: Static electric field gradient imaging in an air atmosphere for Ba0.7Sr0.3TiO3 ferroelectric thin film. Lu, Jia; Kinoshita, Yukinori; Egawa, Genta; Yoshimura, Satoru; Asano, Hidefumi; Saito, Hitoshi // Journal of Applied Physics;12/15/2012, Vol. 112 Issue 12, p124110 

    An alternating electric force microscopy (A-EFM) technique, which is effective for the imaging of static electric field gradient in an air atmosphere, is proposed by using our developed alternating force microscopy. A-EFM uses a frequency modulation of a mechanically oscillating conductive tip,...

  • Polarization retention loss in PbTiO3 ferroelectric films due to leakage currents. Morelli, A.; Venkatesan, Sriram; Palasantzas, G.; Kooi, B. J.; De Hosson, J. Th. M. // Journal of Applied Physics;Oct2007, Vol. 102 Issue 8, p084103 

    The relationship between retention loss in single crystal PbTiO3 ferroelectric thin films and leakage currents is demonstrated by piezoresponse and conductive atomic force microscopy measurements. It was found that the polarization reversal in the absence of an electric field followed a...

  • Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc. Ahn, W. S.; Ahn, S. H.; Choi, S. K. // Journal of Applied Physics;12/1/2006, Vol. 100 Issue 11, p114118 

    We observed the retention loss of dot domains (36 nm diameter) and square domains with sizes of 1 and 25 μm2 that were reversed by applying an electric field at an atomic force microscopy (AFM) conductive tip on a heteroepitaxial PbTiO3 thin film with + polarization in the virgin state, which...

  • Preparation and properties of highly (100)-oriented Pb(Zr0.2Ti0.8)O3 thin film prepared by rf magnetron sputtering with a PbOx buffer layer. Wu, Jiagang; Zhu, Jiliang; Xiao, Dingquan; Zhu, Jianguo; Tan, Junzhe; Zhang, Qinglei // Journal of Applied Physics;5/1/2007, Vol. 101 Issue 9, p094107 

    A method for fabrication of highly (100)-oriented Pb(Zr0.2Ti0.8)O3 (PZT) thin films by rf magnetron sputtering with a special buffer of PbOx (RFMS-SBP) was developed. With this method, highly (100)-oriented Pb(Zr0.2Ti0.8)O3 thin films were prepared on the PbOx/Pt(111)/Ti/SiO2/Si(100) substrates,...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics