High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer

Hyoung-Sub Kim; Injo Ok; Feng Zhu; Zhang, M.; Park, S.; Yum, J.; Zhao, H.; Majhi, Prashant; Garcia-Gutierrez, Domingo I.; Goel, Niti; Tsai, W.; Gaspe, C. K.; Santos, M. B.; Lee, Jack C.
September 2008
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p132902
Academic Journal
The electrical characteristics of HfO2-based n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) and metal-oxide-semiconductor capacitors (MOSCAPs) on high indium content In0.53Ga0.47As channel layers are presented. N-channel MOSFETs with a germanium (Ge) interfacial passivation layer (IPL) show maximum mobility 3186 cm2/V s from split capacitance-voltage (C-V) method and the normalized drain current (to the channel length of 1 μm) of 753 mA/mm at Vg=Vth+2 V and Vd=2 V. On the contrary, MOSFETs without a Ge IPL or with high temperature post-metal annealing (PMA) exhibit inferior characteristics. MOSCAPs on n-type In0.53Ga0.47As layers demonstrate excellent C-V characteristics including low C-V frequency dispersion and low dielectric leakage current.


Related Articles

  • Four-mask-step power-MOSFET process boosts throughput by 30%... Goodenough, Frank // Electronic Design;12/4/95, Vol. 43 Issue 25, p42 

    Discusses power MOSFET designers. Technical information.

  • Voltage regulators offer low dropout.  // Electronic Design;12/4/95, Vol. 43 Issue 25, p140 

    Reports that with n-channel MOSFETs on the output as linear pass elements, the MSK 5020 voltage regulator achieves extremely low dropout-voltage specifications under high current conditions.

  • Dual-gate MOSFETs match gate drive to load level. Schweber, Bill; Granville, Fran // EDN;04/23/98, Vol. 43 Issue 9, p13 

    Offers information on dual-gate metal oxide semiconductor field effect-transistors (MOSFET) devices. Amount of current both gates handle; Estimated cost of the device; Availability of the device.

  • Random telegraph signal: An atomic probe of the local current in field-effect transistors. Mueller, H.H.; Schulz, M. // Journal of Applied Physics;2/1/1998, Vol. 83 Issue 3, p1734 

    Presents information pertaining to the amplitude telegraph signals (RTSs) while highlighting the metal oxide field-effect transistors (MOSFETs). What the amplitudes of the RTSs depends upon; Information on the MOSFETs.

  • MOSFET scaling into the future. Voorde, Paul Vande // Hewlett-Packard Journal;Aug97, Vol. 48 Issue 4, p96 

    Offers a look at metal oxide semiconductor field-effect transistor (MOSFET) scaling. Performance of scaled MOSFET; Important principle in MOSFET scaling; Gate delay simulations; Off-state leakage; Results of the constant-field scaling of MOSFET.

  • Planar vertical DMOS process cuts power-MOSFET specific on-resistance. Goodenough, Frank // Electronic Design;7/08/96, Vol. 44 Issue 14, p32 

    Features a planar low-voltage power metal oxide semiconductor field-effect transistor (vertical DMOSFET) process that cuts power-MOSFET specific on-resistance. Advantages; Capabilities; Breaking of vertical MOSFET structures; Improving of DMOSFET performance; Design features.

  • Working with MOSFET's. Marston, Ray // Electronics Now;May93, Vol. 64 Issue 5, p59 

    Presents the third article in a series about the metal-oxide-semiconductor field-effect transistor (MOSFET). The enhancement-mode MOSFET, including practical MOSFET circuit schematics based upon small-signal MOS transistors available in a low-cost CMOS integrated circuit; MOSFET basics; Simple...

  • Smaller packages on tap for low-voltage power MOSFETs. Goodenough, Frank // Electronic Design;06/09/97, Vol. 45 Issue 12, p103 

    Comments on the introduction of a package for use in the development of semiconductor technology, designed to provide low-electrical resistance in metal oxide semiconductor field-effect transistors (MOSFETs). Advantages of using the package; Reference to the design of the packages; Consumer...

  • IR plans $40M expansion; adding another 6-inch line.  // Electronic News (10616624);11/20/95, Vol. 41 Issue 2092, p64 

    Looks at plans by International Rectifier Corp. to expand wafer capacity at its power MOSFET plant in Temecula, California. How much will b spent by the company to meet the demand for the company's core growth products; The power MOSFET market.

  • Continuing degradation of the SiO2/Si interface after hot hole stress. Al-kofahi, I.S.; Zhang, J.F. // Journal of Applied Physics;3/15/1997, Vol. 81 Issue 6, p2686 

    Presents the results of experiments on the continuing interface trap generation post-hot hole injection in metal-oxide-semiconductor field effect transistors. Investigation of the generation mechanism; Hydrogen transportation model; Trapped hole conversion model; Role played by free...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics