TITLE

High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer

AUTHOR(S)
Hyoung-Sub Kim; Injo Ok; Feng Zhu; Zhang, M.; Park, S.; Yum, J.; Zhao, H.; Majhi, Prashant; Garcia-Gutierrez, Domingo I.; Goel, Niti; Tsai, W.; Gaspe, C. K.; Santos, M. B.; Lee, Jack C.
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p132902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electrical characteristics of HfO2-based n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) and metal-oxide-semiconductor capacitors (MOSCAPs) on high indium content In0.53Ga0.47As channel layers are presented. N-channel MOSFETs with a germanium (Ge) interfacial passivation layer (IPL) show maximum mobility 3186 cm2/V s from split capacitance-voltage (C-V) method and the normalized drain current (to the channel length of 1 μm) of 753 mA/mm at Vg=Vth+2 V and Vd=2 V. On the contrary, MOSFETs without a Ge IPL or with high temperature post-metal annealing (PMA) exhibit inferior characteristics. MOSCAPs on n-type In0.53Ga0.47As layers demonstrate excellent C-V characteristics including low C-V frequency dispersion and low dielectric leakage current.
ACCESSION #
34771942

 

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